IXFH70N65X3

Single FETs, MOSFETs Overview

The IXFH70N65X3 is a single N-channel power MOSFET manufactured by Littelfuse (IXYS). It utilizes X3 technology in a TO-247-3 through-hole package. Key electrical parameters include a drain-source voltage of 650 V and a continuous drain current of 70 A. The device features a maximum on-resistance of 44 mΩ at 10 V gate drive. Gate specifications define a threshold voltage of 5.2 V, a total gate charge of 66 nC, and a maximum gate-source voltage of ±20 V. Thermal performance includes a power dissipation rating of 780 W and an operating temperature range from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

• Utilizes X3 silicon planar technology for enhanced switching efficiency and thermal management.
• Designed with low internal resistance to minimize conduction losses in high-current applications.
• Features robust avalanche energy capability for improved reliability under transient conditions.

Single FETs, MOSFETs Applications

• High-frequency switch-mode power supplies
• Industrial motor control systems
• Uninterruptible power supply (UPS) inverters

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer marking on the component body matches Littelfuse or IXYS branding. Confirm the part number suffix corresponds to the standard TO-247-3 lead form. Check RoHS compliance documentation against current regulatory requirements. Ensure storage conditions prevent electrostatic discharge damage prior to installation.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high voltage blocking capabilities combined with significant current handling. The TO-247-3 package facilitates effective heat sinking for high-power dissipation scenarios. Evaluate the gate charge requirements against the driving circuit's output capability to ensure adequate switching speeds.

Single FETs, MOSFETs Part Context

This discrete MOSFET belongs to the IXYS X3 product family, which focuses on optimizing the trade-off between on-resistance and switching speed. The series is engineered for industrial power conversion applications where thermal stability and ruggedness are critical design constraints.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other IXYS X3 series devices sharing identical pinouts and voltage ratings. Verify that any substitute maintains equivalent thermal resistance and gate charge characteristics to preserve original circuit performance.

Single FETs, MOSFETs FAQ

What is the maximum repetitive peak drain-source voltage?

The maximum repetitive peak drain-source voltage is 650 V.

Does the device support through-hole mounting?

Yes, the IXFH70N65X3 is housed in a TO-247-3 package designed for through-hole installation.