IXFK240N15T2

Single FETs, MOSFETs Overview

The Littelfuse IXFK240N15T2 is an N-Channel MOSFET utilizing HiPerFET technology. It features a drain-to-source voltage (Vdss) of 150 V and a continuous drain current (Id) of 240 A at 25°C case temperature. The device supports fast power switching performance with low on-resistance and gate charge. It is housed in a TO-264AA package and complies with RoHS standards.

Single FETs, MOSFETs Feature Summary

• Incorporates Littelfuse HiPerFET technology for optimized power switching
• High current capability designed for demanding power applications
• Low on-resistance and gate charge for improved efficiency

Single FETs, MOSFETs Applications

• Power supply circuits
• Motor control systems
• Industrial inverters

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and ordering suffix to ensure compatibility with your design requirements. Confirm RoHS compliance status directly with the manufacturer or authorized distributor, as regulatory updates may occur. Ensure thermal management solutions align with the specified continuous drain current ratings under actual operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component when high current handling and low conduction losses are critical. The 150 V rating suits lower voltage DC bus applications. Consider the TO-264AA package for its thermal performance and mounting flexibility. Evaluate gate drive requirements against the device's gate charge specifications to ensure efficient switching transitions.

Single FETs, MOSFETs Part Context

This part belongs to the Gen2 Series of N-Channel Trench Gate MOSFETs from Littelfuse. It represents an evolution in power semiconductor design, focusing on reducing switching losses while maintaining robust current handling capabilities for industrial and automotive-grade power electronics.

Single FETs, MOSFETs Replacement Considerations

Consult official Littelfuse substitution guides for verified alternatives. Cross-reference pinouts, thermal characteristics, and electrical limits before replacing. Generic equivalents may not match the specific HiPerFET performance metrics.