IXFR180N07

Single FETs, MOSFETs Overview

The IXFR180N07 is a single N-channel power MOSFET die from the HiPerFET series, designed for high-current switching applications. It features a silicon chip mounted on a Direct-Copper-Bond (DCB) substrate, providing high power dissipation capabilities and an isolated mounting surface with 2500V electrical isolation. Key electrical parameters include a drain-source voltage of 70V, a continuous drain current of 180A, and a maximum on-resistance of 6mΩ. The device exhibits a rise time of 90ns and a fall time of 55ns, supporting efficient operation in demanding power electronics environments.

Single FETs, MOSFETs Feature Summary

• Utilizes a silicon chip on a Direct-Copper-Bond substrate for enhanced thermal management and high power dissipation.
• Provides an electrically isolated mounting surface rated at 2500V, facilitating safe integration into grounded systems.
• Incorporates HiPerFET technology to achieve low on-resistance and optimized switching performance for high-efficiency applications.

Single FETs, MOSFETs Applications

• High-current DC-DC converters
• Battery charging systems
• Switched-mode power supplies

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and specific lot traceability requirements prior to acquisition. Ensure handling procedures account for the bare die nature of the component, requiring appropriate substrate mounting techniques. Review datasheet specifications for thermal interface material compatibility and mechanical mounting constraints to ensure reliable long-term operation.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high current capacity up to 180A with low voltage drop characteristics. The 70V rating suits low-voltage high-power applications where efficiency is critical. Consider the bare die format for custom module assembly rather than standard packaged solutions. Evaluate thermal management strategies carefully due to the high power density inherent in the DCB substrate design.

Single FETs, MOSFETs Part Context

This part belongs to the HiPerFET series by IXYS, now part of Littelfuse, specializing in advanced power MOSFET technologies. The series focuses on minimizing conduction losses while maintaining robust switching capabilities. Similar devices in the lineup often vary in voltage ratings or current capacities but share the underlying HDMOS process technology and packaging innovations aimed at improving system-level efficiency.

Single FETs, MOSFETs Replacement Considerations

Direct replacements may include other HiPerFET dies with compatible voltage and current ratings. Verify pinout and thermal pad configurations match the existing design. Cross-reference switching times and gate charge values to ensure circuit stability. Consult official substitution lists for confirmed equivalents that maintain electrical and mechanical compatibility.