IXFR24N80P

Single FETs, MOSFETs Overview

The IXFR24N80P is an N-Channel Enhancement Mode Power MOSFET from the PolarHV HiPerFET series, manufactured by Littelfuse (formerly IXYS). It features a drain-source breakdown voltage of 800 V and a continuous drain current of 13 A at 25°C case temperature. The device has a maximum on-state resistance of 420 mΩ and is rated for unclamped inductive switching with an avalanche energy capability of 1.5 J. Packaged in the ISOPLUS247 format, it integrates a fast intrinsic diode with a reverse recovery time of 250 ns.

Single FETs, MOSFETs Feature Summary

• Utilizes a silicon chip mounted on a Direct-Copper-Bond substrate to achieve high power dissipation capabilities.
• Features an electrically isolated mounting surface providing 2500V electrical isolation between the tab and leads.
• Incorporates a fast recovery intrinsic diode suitable for hard-switching applications.
• Rated for Unclamped Inductive Switching (UIS) to withstand avalanche stress events.

Single FETs, MOSFETs Applications

• High-efficiency DC-DC converters
• Power factor correction circuits
• Motor control systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against manufacturer documentation to confirm package type and compliance status. Ensure thermal interface materials are compatible with the isolated tab design. Confirm that the selected component meets all required electrical ratings for the target application environment before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when high-voltage isolation and robust avalanche performance are required. The ISOPLUS247 package facilitates direct mounting to heatsinks while maintaining electrical safety. Consider the 420 mΩ on-resistance and 13 A current rating for thermal management calculations in medium-power switching designs.

Single FETs, MOSFETs Part Context

This part belongs to the PolarHV HiPerFET family, designed for high-voltage power switching applications. The ISOPLUS247 package variant provides enhanced thermal performance and electrical isolation compared to standard TO-247 packages, making it suitable for industrial and commercial power supplies requiring reliable operation under harsh conditions.

Single FETs, MOSFETs Replacement Considerations

Check datasheets for alternative parts offering similar 800V ratings and comparable RDS(on) values. Verify pinout compatibility and thermal resistance specifications to ensure equivalent performance in existing circuit layouts without redesign.

Single FETs, MOSFETs FAQ

What is the electrical isolation rating of the ISOPLUS247 package?

The device provides 2500V RMS electrical isolation between the mounting surface and the leads for one minute at 50/60 Hz.

Is the IXFR24N80P rated for avalanche operation?

Yes, the device is avalanche rated with a repetitive avalanche energy (EAR) of 50 mJ and a single pulse avalanche energy (EAS) of 1.5 J.