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IXFT58N20 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists IXYS. Its product description is MOSFET N-CH 200V 58A TO268. Review the specifications below when checking this part for your BOM.
The IXFT58N20 is a silicon N-channel power MOSFET manufactured by IXYS. It features a 200V drain-source breakdown voltage and a continuous drain current of 58A. The device utilizes the X4-class technology to achieve low on-resistance and conduction losses, enhancing overall efficiency. It is housed in a TO-247 package with the case connected to the drain.
Verify component authenticity through authorized channels as the part status is listed as obsolete. Confirm technical specifications against official datasheets before integration. Ensure compliance with RoHS directives and check for lead-free certification requirements specific to your manufacturing standards.
Select this component for applications requiring robust performance at 200V with high current handling up to 58A. The X4-class technology offers improved efficiency compared to standard counterparts. Consider thermal management solutions suitable for the TO-247 package to maintain optimal operating temperatures during switching cycles.
This component belongs to the IXYS power MOSFET portfolio, specifically designed for high-efficiency power conversion. It is part of the broader family of N-channel enhancement mode devices intended for industrial and consumer electronics applications where reliability and low loss are critical design parameters.
Public confirmed substitute part numbers are not available in the provided documentation.
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