IXFV110N25T

Description：MOSFET N-CH 110A PLUS220
Series：-
Mfr：IXYS
Package：Bulk

SKU:665d60c9ed11 Category: Single FETs, MOSFETs Brand: IXYS

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Product introduction

IXFV110N25T is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists IXYS. Its product description is MOSFET N-CH 110A PLUS220. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IXFV110N25T

Description：MOSFET N-CH 110A PLUS220
Series：-
Mfr：IXYS
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

Single FETs, MOSFETs datasheet and documents for IXFV110N25T

IXFV110N25T

Single FETs, MOSFETs Overview

The IXFV110N25T is an N-channel enhancement-mode Power MOSFET from the IXYS HiperFET series. It features a Trench Gate technology design housed in a TO-247 package for through-hole mounting. The device supports a maximum drain-source voltage of 250 V and a continuous drain current of 110 A at case temperature. Key electrical characteristics include a typical on-resistance of 16 mΩ, a gate charge of 83 nC, and a power dissipation rating of 694 W. It operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Utilizes IXYS Trench Gate technology for optimized switching performance and low conduction losses.
Designed as a high-voltage single N-channel enhancement mode device for robust power control.
Engineered with a rugged TO-247 through-hole package suitable for high-power thermal management applications.

Single FETs, MOSFETs Applications

High-frequency switch-mode power supplies
DC-DC converter circuits
Motor drive systems

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix and revision code against the manufacturer's latest datasheet to ensure compatibility with your design requirements. Confirm that the component meets all necessary regulatory standards for your target market before finalizing procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component when a 250 V rating and 110 A current capacity are required in a TO-247 form factor. Consider its 16 mΩ on-resistance and 83 nC gate charge for efficiency calculations in medium-to-high power switching applications requiring reliable thermal performance.

Single FETs, MOSFETs Part Context

This part belongs to the IXYS HiperFET family, which utilizes advanced trench gate technology. It is designed for general-purpose power switching applications where high efficiency and reliability are critical. The TO-247 package provides a balance of current handling capability and ease of integration into standard PCB layouts.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure any replacement matches the 250 V, 110 A, and TO-247 specifications precisely.