IXKH20N60C5

Single FETs, MOSFETs Overview

The IXKH20N60C5 is a single N-channel enhancement mode power MOSFET from the IXYS CoolMOS family, housed in a TO-247-3 through-hole package. It features a 600V drain-source breakdown voltage and a continuous drain current of 20A at 25°C. The device exhibits a maximum on-resistance of 180mΩ and a gate charge of 42nC. It supports a maximum power dissipation of 250W and operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Utilizes third-generation CoolMOS superjunction technology for low on-resistance and high blocking capability.
• Features an electrically isolated mounting surface with direct-copper-bond substrate for high power dissipation.
• Rated for unclamped inductive switching (UIS) to withstand avalanche energy events.

Single FETs, MOSFETs Applications

• Switched Mode Power Supplies (SMPS)
• Uninterruptible Power Supplies (UPS)
• Power Factor Correction (PFC) circuits
• Inductive Heating systems

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix C5 against the official datasheet to confirm pinout and isolation specifications. Confirm RoHS compliance status as required by your assembly standards. Check for obsolescence notices or lifecycle changes directly from the manufacturer before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring 600V blocking capability with moderate current handling up to 20A. The TO-247-3 package facilitates efficient thermal management via direct mounting. Ensure the gate drive voltage aligns with the specified threshold characteristics for optimal switching performance.

Single FETs, MOSFETs Part Context

This part belongs to the IXYS CoolMOS series, which employs superjunction technology to achieve superior figure-of-merit compared to conventional planar MOSFETs. The IXKH variant specifically denotes an insulated back-side configuration, providing electrical isolation between the drain and the mounting tab for simplified heat sink integration.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include IXYS parts such as IXKH20N60C3 or IXKH20N60C5M, provided they match the TO-247-3 footprint and electrical ratings. Verify that any replacement maintains the same CoolMOS generation and isolation voltage requirements.