IXTH60N15

Single FETs, MOSFETs Overview

The IXTH60N15 is an N-Channel Enhancement Mode MOSFET manufactured by IXYS. It features a 150V drain-source breakdown voltage and supports a continuous drain current of 60A. The device exhibits a low on-resistance of 33 milliohms, facilitating efficient power handling. Packaged in a TO-247-3 through-hole housing, it is designed for robust thermal performance. Key switching parameters include a fall time of 18 nanoseconds and a rise time of 20 nanoseconds. This component belongs to the IXTH60N series and utilizes silicon technology for reliable operation in high-current applications.

Single FETs, MOSFETs Feature Summary

• Utilizes N-Channel enhancement mode technology for efficient switching control
• Features low on-resistance to minimize conduction losses during operation
• Designed with a TO-247-3 through-hole package for secure mounting

Single FETs, MOSFETs Applications

• High-current DC-DC converter circuits
• Motor drive systems requiring robust switching elements
• Power supply output stages

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix or variant against the official datasheet to ensure compatibility with your design requirements. Confirm that the TO-247-3 package dimensions match your PCB footprint exactly. Check for any recent product change notices regarding material composition or manufacturing location updates from IXYS before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a 150V rating and 60A continuous current capacity are required. The 33 milliohm on-resistance makes it suitable for applications prioritizing efficiency over ultra-high voltage ratings. Ensure the thermal management solution can handle the power dissipation associated with the specified current levels in the chosen operating environment.

Single FETs, MOSFETs Part Context

This part belongs to the IXYS IXTH60N series of N-Channel MOSFETs. It shares the same current rating as other members like the IXTH60N25 but differs in voltage specifications. The series is characterized by silicon technology and through-hole packaging options, targeting industrial and commercial power electronics markets.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes within the same family include the IXTH60N25 (250V) and IXTH60N30T (300V), though voltage ratings differ. Cross-manufacturer equivalents should be verified for pinout compatibility and electrical parameter alignment.