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IXTM6N90 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists IXYS. Its product description is MOSFET N-CH TO-3. Review the specifications below when checking this part for your BOM.
The IXTM6N90 is a silicon N-channel power MOSFET manufactured by IXYS. It features a TO-247 package and operates with a drain-source voltage of 900 V and a continuous drain current of 6 A. The device has a maximum on-resistance of 3.5 ohms at 10 V gate drive. It supports junction temperatures from -55°C to +150°C and includes an integrated body diode.
Verify the specific suffix against the official datasheet to confirm pinout and thermal characteristics. Ensure the component matches the required voltage and current ratings for the target circuit design before integration.
Select this component for high-voltage applications requiring moderate current handling. Evaluate the thermal resistance and on-resistance to ensure adequate heat dissipation within the specified operating temperature range.
This part belongs to the standard discrete MOSFET category from IXYS. It utilizes silicon technology and is designed for general-purpose power switching tasks in industrial and consumer electronics environments.
Check for direct replacements within the IXYS IXT series or comparable high-voltage N-channel MOSFETs from other manufacturers, ensuring identical package dimensions and electrical parameters.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.

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IXTM6N90 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists IXYS. Its product description is MOSFET N-CH TO-3. Review…
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IXTM6N90 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists IXYS. Its product description is MOSFET N-CH TO-3. Review…
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IXTM6N90 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists IXYS. Its product description is MOSFET N-CH TO-3. Review…
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