IXTP48P05T

Single FETs, MOSFETs Overview

The Littelfuse IXTP48P05T is a P-Channel Power MOSFET from the Trench Gate Series, housed in a TO-220AB package. It features a drain-source voltage (V_DSS) of -50V and a continuous drain current (I_D) of 48A at 25°C. The device exhibits a maximum on-resistance (R_DS(on)) of 30mΩ at V_GS = -10V. Key gate parameters include a threshold voltage (V_GS(th)) of 4.5V @ 250µA and a maximum gate-source voltage (V_GS) of ±15V.

Single FETs, MOSFETs Feature Summary

• Optimized for high-side switching applications using simple ground-referenced drive circuits
• Supports complementary power output stages when paired with corresponding N-channel MOSFETs
• Reduces component count to simplify driver circuit design

Single FETs, MOSFETs Applications

• High-side switching in automotive power distribution
• Complementary half-bridge power output stages
• General purpose power switching where simplified drive is required

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix and tape/reel or tube packaging configuration against the manufacturer's latest ordering guide. Confirm RoHS compliance status and lead times directly with authorized distributors. Ensure the TO-220AB thermal characteristics match your heatsinking requirements for the intended current load.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a P-Channel MOSFET with low on-resistance and high current capability. The Trench Gate technology offers improved switching performance compared to planar devices. Consider the -50V rating for 12V or 24V systems. Verify that the gate drive voltage can reliably exceed the 4.5V threshold for full enhancement.

Single FETs, MOSFETs Part Context

This part belongs to Littelfuse's Trench Gate Series of P-Channel MOSFETs. The series is engineered to provide robust protection and efficient power handling for automotive and industrial applications. These devices are designed to complement N-channel counterparts for complete bridge solutions.

Single FETs, MOSFETs Replacement Considerations

Check for direct pin-compatible substitutes within the same -50V, ~48A specification range. Verify R_DS(on) and V_GS(th) compatibility to ensure existing gate drivers function correctly without modification.