IXTP60N020T

Single FETs, MOSFETs Overview

The IXTP60N020T is an N-Channel enhancement mode power MOSFET manufactured by IXYS. It utilizes silicon technology and is housed in a TO-220-3 through-hole package. The device features a drain-source breakdown voltage of 200 V and a continuous drain current capacity of 60 A. Key electrical parameters include a maximum on-resistance of 50 mOhms, a gate-source voltage range of -30 V to +30 V, and a threshold voltage of 2.5 V. It supports a maximum power dissipation of 250 W and operates within a temperature range of -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

• High current handling capability suitable for demanding power applications
• Avalanche rated design for robustness against transient energy events
• Fast intrinsic rectifier integrated for efficient switching performance
• Low on-resistance characteristic to minimize conduction losses

Single FETs, MOSFETs Applications

• DC-DC converters
• Battery chargers
• Switch-mode and resonant-mode power supplies
• AC motor drives
• Uninterruptible power supplies

Single FETs, MOSFETs Procurement Notes

Verify the exact part number suffix during procurement. Datasheets indicate variations such as IXTP48N20T or IXTQ60N20T with similar ratings but distinct packaging or specific parameter tolerances. Confirm that the component matches the required 200V/60A specifications and TO-220-3 form factor before integration into the supply chain.

Single FETs, MOSFETs Selection Notes

Select this component when a 200V N-Channel MOSFET with high current capacity is required. Ensure the application thermal management can support the specified power dissipation limits. Verify compatibility with the required gate drive voltage levels and switching frequency constraints associated with the device's charge characteristics.

Single FETs, MOSFETs Part Context

This component belongs to the IXTP series of power MOSFETs from IXYS. These devices are designed for general-purpose power switching applications requiring high reliability. The series typically offers a balance of low on-resistance and fast switching speeds, making them suitable for various industrial and consumer electronics power stages.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with IXTP48N20T for lower current variants or IXTQ60N20T for potentially different packaging options. Ensure any substitute maintains the 200V rating and comparable on-resistance values to preserve circuit performance.