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IXTV18N60P is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists IXYS. Its product description is MOSFET N-CH 600V 18A PLUS220. Review the specifications below when checking this part for your BOM.
The IXTV18N60P is a PolarHV Power MOSFET featuring an N-Channel enhancement mode design. It provides a drain-source breakdown voltage of 600 V and a continuous drain current of 22 A at 25°C. The device exhibits a maximum on-resistance of 350 mΩ. It operates within a temperature range from -55°C to +150°C junction temperature, with a power dissipation rating of 400 W. The component utilizes a TO-247-3 through-hole package.
Verify the specific datasheet version and manufacturer documentation to confirm exact electrical parameters and thermal characteristics. Ensure the procurement source provides official IXYS or Littelfuse certified components to guarantee authenticity and compliance with RoHS standards before finalizing orders.
Select this component when a 600 V N-Channel MOSFET with avalanche capability is required. The TO-247-3 package suits through-hole mounting needs. Compare the 350 mΩ on-resistance against circuit efficiency requirements and verify that the 22 A current rating aligns with the specific application's thermal management capabilities.
This part belongs to the PolarHV series by IXYS, designed for high-performance power switching. It integrates fast intrinsic diode technology and robust avalanche ruggedness. The TO-247-3 form factor supports standard through-hole assembly processes commonly used in industrial and consumer power electronics manufacturing.
Cross-reference with other PolarHV series devices such as IXTQ22N60P for pin-compatible alternatives. Verify that substitute parts maintain identical voltage ratings, current handling, and package dimensions to ensure seamless integration without redesigning the printed circuit board layout.
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