Single FETs, MOSFETs IXTV18N60P product image

IXTV18N60P

  • Description:MOSFET N-CH 600V 18A PLUS220
  • Series:PolarHV™
  • Mfr:IXYS
  • Package:Tube

SKU:f00df50476aa Category: Brand:

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IXTV18N60P is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists IXYS. Its product description is MOSFET N-CH 600V 18A PLUS220. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IXTV18N60P

  • Description:MOSFET N-CH 600V 18A PLUS220
  • Series:PolarHV™
  • Mfr:IXYS
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):600 V
  • Current - Continuous Drain (Id) @ 25°C:18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:420mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id:5.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:49 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:2500 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):360W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:PLUS220
  • Package / Case:TO-220-3, Short Tab

Single FETs, MOSFETs datasheet and documents for IXTV18N60P

IXTV18N60P

Single FETs, MOSFETs Overview

The IXTV18N60P is a PolarHV Power MOSFET featuring an N-Channel enhancement mode design. It provides a drain-source breakdown voltage of 600 V and a continuous drain current of 22 A at 25°C. The device exhibits a maximum on-resistance of 350 mΩ. It operates within a temperature range from -55°C to +150°C junction temperature, with a power dissipation rating of 400 W. The component utilizes a TO-247-3 through-hole package.

Single FETs, MOSFETs Feature Summary

  • Avalanche rated for unclamped inductive switching applications
  • Fast intrinsic body diode characteristics
  • Low package inductance for easy driving and protection

Single FETs, MOSFETs Applications

  • High power density switching circuits
  • Space-constrained power supply designs
  • Inductive load control systems

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet version and manufacturer documentation to confirm exact electrical parameters and thermal characteristics. Ensure the procurement source provides official IXYS or Littelfuse certified components to guarantee authenticity and compliance with RoHS standards before finalizing orders.

Single FETs, MOSFETs Selection Notes

Select this component when a 600 V N-Channel MOSFET with avalanche capability is required. The TO-247-3 package suits through-hole mounting needs. Compare the 350 mΩ on-resistance against circuit efficiency requirements and verify that the 22 A current rating aligns with the specific application's thermal management capabilities.

Single FETs, MOSFETs Part Context

This part belongs to the PolarHV series by IXYS, designed for high-performance power switching. It integrates fast intrinsic diode technology and robust avalanche ruggedness. The TO-247-3 form factor supports standard through-hole assembly processes commonly used in industrial and consumer power electronics manufacturing.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other PolarHV series devices such as IXTQ22N60P for pin-compatible alternatives. Verify that substitute parts maintain identical voltage ratings, current handling, and package dimensions to ensure seamless integration without redesigning the printed circuit board layout.

IXTV18N60PIXTV18N60P

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