IXTY1R6N50P

Single FETs, MOSFETs Overview

The IXTY1R6N50P is a single N-channel enhancement mode Power MOSFET manufactured by IXYS. It features a 500 V drain-source breakdown voltage and supports a continuous drain current of 1.6 A. The device exhibits a maximum on-resistance of 6.5 Ohms at room temperature. It operates within a junction temperature range of -55°C to +150°C and dissipates up to 43 W of power. The component utilizes a DPAK-3 (TO-252-3) surface-mount package with a gate threshold voltage of 5.5 V and a total gate charge of 3.9 nC.

Single FETs, MOSFETs Feature Summary

• Single N-channel enhancement mode configuration for high-voltage switching applications
• Avalanche-rated capability for robust operation under inductive load conditions
• Surface-mount DPAK-3 package design optimized for automated PCB assembly

Single FETs, MOSFETs Applications

• High-voltage DC-DC converter circuits
• Power supply output stages
• Motor control systems requiring moderate current levels

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and RoHS compliance status directly with the manufacturer or authorized distributors, as product specifications may evolve. Confirm that the DPAK-3 package dimensions align with your PCB footprint requirements before finalizing procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component when a compact surface-mount solution is required for 500 V applications with low current demands. The relatively high on-resistance makes it suitable for cost-sensitive designs where thermal management is less critical than board space constraints.

Single FETs, MOSFETs Part Context

This part belongs to the IXYS discrete MOSFET portfolio designed for general-purpose power switching. It complements higher-current variants like the IXTQ series by offering a smaller form factor suitable for lower-power density electronics.