Diode Arrays JAN1N7047CCT3 product image

JAN1N7047CCT3

$84.40
  • Description:DIODE ARR SCHOTT 150V 16A TO-257
  • Series:-

SKU:0bf754539823 Category: Brand:

  
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JAN1N7047CCT3 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is DIODE ARR SCHOTT 150V 16A TO-257. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for JAN1N7047CCT3

  • Description:DIODE ARR SCHOTT 150V 16A TO-257
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):150 V
  • Current - Average Rectified (Io) (per Diode):16A
  • Voltage - Forward (Vf) (Max) @ If:1.13 V @ 16 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:500 µA @ 150 V
  • Operating Temperature - Junction:-65°C ~ 150°C
  • Mounting Type:Through Hole
  • Package / Case:TO-257-3
  • Supplier Device Package:TO-257
  • Grade:Military
  • Qualification:MIL-PRF-19500/737

Diode Arrays datasheet and documents for JAN1N7047CCT3

JAN1N7047CCT3

Diode Arrays Overview

The JAN1N7047CCT3 is a silicon Schottky rectifier manufactured by Microchip Technology, designed for through-hole mounting in TO-257AA-3 packages. It features a dual configuration with a maximum repetitive reverse voltage of 150 V and an average forward current rating of 16 A. The device exhibits a forward voltage drop of 1.13 V at rated current and supports a non-repetitive peak forward surge current of 120 A. Reverse leakage current is specified at 500 uA. The component operates within a temperature range from -65°C to +150°C junction temperature.

Diode Arrays Feature Summary

  • Dual Schottky barrier rectification architecture utilizing silicon technology
  • Through-hole installation capability in standardized axial leaded package
  • Extended thermal performance suitable for high-temperature environments

Diode Arrays Applications

  • High-efficiency power supply rectification circuits
  • Free-wheeling diode applications in switching converters
  • Protection against reverse polarity in DC power systems

Diode Arrays Procurement Notes

Verify the specific suffix CCT3 corresponds to the required tray packaging format during acquisition. Confirm that the JAN prefix indicates compliance with MIL-PRF-19500 specifications if military-grade qualification is mandatory for the design. Ensure the TO-257AA-3 footprint matches the PCB layout constraints before finalizing procurement orders.

Diode Arrays Selection Notes

Select this component when low forward voltage drop is critical for efficiency in medium-current applications requiring 16 A handling. The dual configuration allows for common cathode or independent rectification paths within a single package. Verify that the 150 V breakdown voltage exceeds the maximum circuit transient voltages to ensure reliable operation under stress conditions.

Diode Arrays Part Context

This part belongs to the JAN series of discrete semiconductors produced by Microchip Technology, formerly Microsemi. The JAN designation typically signifies components manufactured to meet rigorous military reliability standards. The 1N7047 base number identifies the electrical characteristics, while the CCT3 suffix denotes the specific tape and reel or tray packaging variant for automated assembly processes.

Diode Arrays Replacement Considerations

The JAN1N7047CCT3 serves as the direct commercial equivalent to the JANTXV1N7047CCT3. Both parts share identical electrical parameters and physical dimensions. Substitution requires verification that the alternative grade meets the specific environmental qualification requirements of the original design.

JAN1N7047CCT3JAN1N7047CCT3
$84.40
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