Diode Arrays JANS1N5711UBD/TR product image

JANS1N5711UBD/TR

$127.95
  • Description:DIODE ARRAY SCHOTTKY 50V 33MA UB
  • Series:-

SKU:05d225870d64 Category: Brand:

  
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JANS1N5711UBD/TR is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is DIODE ARRAY SCHOTTKY 50V 33MA UB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for JANS1N5711UBD/TR

  • Description:DIODE ARRAY SCHOTTKY 50V 33MA UB
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tape & Reel (TR)
  • Diode Configuration:1 Pair Series Connection
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):50 V
  • Current - Average Rectified (Io) (per Diode):33mA
  • Voltage - Forward (Vf) (Max) @ If:1 V @ 15 mA
  • Speed:Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:200 nA @ 50 V
  • Operating Temperature - Junction:-65°C ~ 150°C
  • Mounting Type:Surface Mount
  • Package / Case:3-SMD, No Lead
  • Supplier Device Package:UB
  • Grade:Military
  • Qualification:MIL-PRF-19500/444

Diode Arrays datasheet and documents for JANS1N5711UBD/TR

JANS1N5711UBD/TR

Diode Arrays Overview

The JANS1N5711UBD/TR is a JANS-qualified Schottky barrier diode manufactured by Microchip Technology. It utilizes silicon technology and features a ceramic surface-mount package designed for high-reliability applications. The device operates within a junction temperature range of -65°C to +150°C. Key electrical specifications include a maximum repetitive reverse voltage of 50 V, an average forward current of 33 mA, and a maximum forward voltage of 1 V at 15 mA. Reverse leakage current is specified at 200 nA at 50 V.

Diode Arrays Feature Summary

  • JANS qualification ensures suitability for space and high-reliability environments.
  • Ceramic surface-mount construction provides robust physical integrity.
  • Schottky barrier technology enables low turn-on voltage and fast switching.

Diode Arrays Applications

  • Spacecraft power systems
  • High-reliability military electronics
  • UHF/VHF detection circuits

Diode Arrays Procurement Notes

Verify the specific suffix configuration against the official datasheet to ensure compliance with required radiation hardness levels. Confirm that the ceramic package variant matches the intended PCB layout constraints. Validate that the component lot meets all necessary environmental testing standards for the target application before integration.

Diode Arrays Selection Notes

Select this component when JANS radiation hardness certification is mandatory for the system design. The ceramic surface-mount package offers a compact footprint suitable for dense board layouts while maintaining thermal stability. Ensure the circuit design accommodates the 33 mA current limit and 50 V reverse voltage rating for proper operation.

Diode Arrays Part Context

This part belongs to the 1N5711 family of small-signal Schottky diodes. It serves as the space-grade equivalent to commercial axial-leaded versions, providing similar electrical characteristics in a ruggedized ceramic surface-mount form factor. The series is widely recognized for use in demanding RF and pulse applications requiring high breakdown voltage and ultrafast switching capabilities.

Diode Arrays Replacement Considerations

Direct substitutes include JAN1N5711UBD or JANTX1N5711UBD for non-space applications. Verify pinout compatibility and package dimensions when replacing with other 1N5711 variants. Consult the manufacturer's cross-reference guide for updated availability and qualification status changes.

JANS1N5711UBD/TRJANS1N5711UBD/TR
$127.95
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