Diode Arrays JANS1N5712UBCA/TR product image

JANS1N5712UBCA/TR

$126.73
  • Description:DIODE ARRAY SCHOTTKY 16V 75MA UB
  • Series:-

SKU:7733f637d352 Category: Brand:

  
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JANS1N5712UBCA/TR is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is DIODE ARRAY SCHOTTKY 16V 75MA UB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for JANS1N5712UBCA/TR

  • Description:DIODE ARRAY SCHOTTKY 16V 75MA UB
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tape & Reel (TR)
  • Diode Configuration:1 Pair Common Anode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):16 V
  • Current - Average Rectified (Io) (per Diode):75mA
  • Voltage - Forward (Vf) (Max) @ If:1 V @ 35 mA
  • Speed:Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:150 nA @ 16 V
  • Operating Temperature - Junction:-65°C ~ 150°C
  • Mounting Type:Surface Mount
  • Package / Case:3-SMD, No Lead
  • Supplier Device Package:UB
  • Grade:Military
  • Qualification:MIL-PRF-19500/444

Diode Arrays datasheet and documents for JANS1N5712UBCA/TR

JANS1N5712UBCA/TR

Diode Arrays Overview

The JANS1N5712UBCA/TR is a silicon Schottky barrier diode manufactured by Microchip Technology. It features a ceramic surface-mount package designed for high-reliability applications. The device operates with a maximum repetitive reverse voltage of 16 V and an average forward current of 75 mA. Key electrical characteristics include a maximum forward voltage of 1 V at specified currents and a reverse leakage current of 150 nA. The component supports a junction temperature range from -65°C to +150°C.

Diode Arrays Feature Summary

  • Military-grade qualification compliant with MIL-PRF-19500/444 standards
  • Ceramic encapsulation for enhanced environmental stability
  • Low forward voltage drop characteristic typical of Schottky technology

Diode Arrays Applications

  • High-reliability aerospace systems
  • Defense electronics requiring JANS qualification
  • Harsh environment signal rectification

Diode Arrays Procurement Notes

Verify the specific suffix configuration against the official datasheet to ensure correct packaging and qualification level. Confirm that the ceramic package type matches the design requirements for thermal and mechanical stress. Check for any recent Product Change Notifications (PCNs) regarding assembly sites or labeling updates before finalizing procurement specifications.

Diode Arrays Selection Notes

Select this component when military reliability standards are mandatory for small-signal rectification. The ceramic package offers superior protection compared to plastic alternatives in extreme environments. Ensure the circuit design accommodates the 16 V reverse voltage limit and the 75 mA current capacity for proper operation within the specified temperature range.

Diode Arrays Part Context

This part belongs to the 1N5712 series of Schottky barrier diodes, adapted for surface-mount technology. It serves as the ceramic SMT equivalent to the traditional axial-leaded 1N5712. The JANS designation indicates it meets strict military screening and quality assurance requirements for space and defense applications.

Diode Arrays Replacement Considerations

Direct substitutes include other JANS-qualified Schottky diodes from the same family, such as JANS1N5711UBCA/TR, provided voltage and current ratings align with the application needs. Verify pinout compatibility and package dimensions when replacing with non-Microchip equivalents.

JANS1N5712UBCA/TRJANS1N5712UBCA/TR
$126.73
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