Diode Arrays JANS1N6642UBD/TR product image

JANS1N6642UBD/TR

$59.65
  • Description:DIODE ARRAY GP 75V 300MA UB
  • Series:-

SKU:020e2b70afca Category: Brand:

  
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JANS1N6642UBD/TR is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is DIODE ARRAY GP 75V 300MA UB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for JANS1N6642UBD/TR

  • Description:DIODE ARRAY GP 75V 300MA UB
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tape & Reel (TR)
  • Diode Configuration:1 Pair Series Connection
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):75 V
  • Current - Average Rectified (Io) (per Diode):300mA
  • Voltage - Forward (Vf) (Max) @ If:1.2 V @ 100 mA
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):5 ns
  • Current - Reverse Leakage @ Vr:500 nA @ 75 V
  • Operating Temperature - Junction:-65°C ~ 175°C
  • Mounting Type:Surface Mount
  • Package / Case:4-SMD, No Lead
  • Supplier Device Package:UB
  • Grade:Military
  • Qualification:MIL-PRF-19500/578

Diode Arrays datasheet and documents for JANS1N6642UBD/TR

JANS1N6642UBD/TR

Diode Arrays Overview

The JANS1N6642UBD/TR is a small signal switching diode manufactured by Microchip Technology. It features a single configuration in a D-5D-2 surface mount package. Key electrical parameters include a peak reverse voltage of 75 V, an average forward current of 300 mA, and a maximum surge current of 2.5 A. The device exhibits a fast recovery time of 5 ns with a forward voltage of 1.2 V at specified currents. Reverse leakage current is limited to 500 nA, and maximum diode capacitance is 5 pF. Operating temperatures range from -65 C to +175 C.

Diode Arrays Feature Summary

  • Designed for high-reliability applications requiring radiation hardness qualification.
  • Provides fast switching performance with a 5 ns recovery time.
  • Capable of operating across an extended industrial temperature range up to 175 C.

Diode Arrays Applications

  • Radiation-hardened computer logic circuits
  • High-reliability signal switching systems
  • Military aerospace electronic assemblies

Diode Arrays Procurement Notes

Verify the specific JANS radiation hardness level and quality certification requirements against project specifications before ordering. Confirm that the D-5D-2 SMD package aligns with PCB layout constraints. Ensure compatibility with assembly processes regarding lead-free or non-RoHS status as indicated by the manufacturer's current documentation. Validate supply chain authenticity through authorized channels.

Diode Arrays Selection Notes

Select this component when radiation tolerance and high-temperature stability are critical design drivers. Compare the 75 V reverse voltage rating against circuit peak inverse voltage requirements. Evaluate the 5 ns recovery time suitability for high-frequency signal paths. Consider the single diode configuration versus dual options if multiple switches are needed within the same footprint.

Diode Arrays Part Context

This part belongs to the Microchip 1N6642 series of radiation-hardened small signal switching diodes. The JANS prefix denotes a specific military-grade reliability tier. It shares core electrical characteristics with commercial variants like the 1N6642U but includes enhanced screening and traceability protocols required for defense and space applications.

Diode Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source data. Cross-reference with other JANS-rated diodes only if electrical parameters and pinout configurations match exactly. Verify that any alternative maintains the required radiation hardness levels.

JANS1N6642UBD/TRJANS1N6642UBD/TR
$59.65
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