JANS2N3507A

Single Bipolar Transistors Overview

The JANS2N3507A is a hermetically sealed NPN silicon small-signal bipolar junction transistor manufactured by Microchip Technology. It features a TO-39 metal can package with three pins and a cylindrical shape. The device supports a maximum collector current of 3 A and a collector-emitter breakdown voltage of 50 V. It has a minimum DC current gain (hFE) of 20 and operates at temperatures up to 200 °C. The component is designed for high-reliability applications requiring radiation hardness.

Single Bipolar Transistors Feature Summary

• Hermetically sealed metal can construction for environmental protection
• Radiation-hardened design suitable for harsh environments
• High thermal stability with elevated maximum operating temperature

Single Bipolar Transistors Applications

• Military aerospace systems
• Satellite communication circuits
• High-reliability power switching

Single Bipolar Transistors Procurement Notes

Verify the specific suffix designation against official Microchip documentation to confirm radiation hardness levels and testing standards. Ensure procurement channels provide traceability certificates required for defense or space-grade components. Confirm package integrity and pin compatibility during integration planning.

Single Bipolar Transistors Selection Notes

Select this component when radiation tolerance and hermetic sealing are mandatory requirements. Compare electrical characteristics such as breakdown voltage and current gain against circuit demands. Consider the TO-39 package constraints for board layout and thermal management in enclosed military enclosures.

Single Bipolar Transistors Part Context

This part belongs to the 2N3507 family of NPN transistors produced under military specifications. It shares core electrical parameters with commercial variants but includes enhanced manufacturing controls for reliability. The JANS prefix indicates a specific level of radiation hardening and quality assurance distinct from standard industrial parts.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include JANTXV2N3507L and JAN2N3507A, provided they meet the specific radiation hardness requirements of the application.