Single Bipolar Transistors JANS2N5667S product image

JANS2N5667S

$216.94
  • Description:TRANS NPN 300V 5A TO39
  • Series:-

SKU:ffb7c3d6fc0b Category: Brand:

  
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JANS2N5667S is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is TRANS NPN 300V 5A TO39. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for JANS2N5667S

  • Description:TRANS NPN 300V 5A TO39
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):5:00 AM
  • Voltage - Collector Emitter Breakdown (Max):300 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 1A, 5A
  • Current - Collector Cutoff (Max):200nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:25 @ 1A, 5V
  • Power - Max:1.2 W
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package:TO-39 (TO-205AD)
  • Grade:Military
  • Qualification:MIL-PRF-19500/455

Single Bipolar Transistors datasheet and documents for JANS2N5667S

JANS2N5667S

Single Bipolar Transistors Overview

JANS2N5667S is a military-grade NPN silicon power switching transistor manufactured by Microchip Technology. It is qualified to MIL-PRF-19500/455 and belongs to the JANS radiation-hardened device level. The component features a TO-39 metal can package with flange mounting capabilities. Key electrical specifications include a maximum collector-emitter voltage of 300 V, a maximum collector current of 5 A, and a total power dissipation of 1.2 W at 25°C ambient temperature. The device operates within a junction temperature range of -65°C to +200°C.

Single Bipolar Transistors Feature Summary

  • Radiation-hardened design suitable for high-radiation environments
  • Qualified to strict military reliability standards
  • High thermal stability with extended junction temperature range

Single Bipolar Transistors Applications

  • Military aerospace power switching circuits
  • High-reliability communication systems
  • Spacecraft power management units

Single Bipolar Transistors Procurement Notes

Verify that the specific part marking corresponds to the JANS radiation-hardened qualification level rather than standard commercial or industrial variants. Confirm compliance with the applicable MIL-PRF-19500 specification revision during acceptance testing. Ensure handling procedures account for the sensitive nature of radiation-hardened semiconductor devices in critical mission applications.

Single Bipolar Transistors Selection Notes

Select this component when radiation tolerance and military reliability are mandatory requirements. Compare against other JANS series transistors based on specific voltage and current ratings. Verify that the TO-39 package geometry meets the mechanical constraints of the target chassis or printed circuit board assembly.

Single Bipolar Transistors Part Context

The JANS2N5667S is part of the broader 2N566x family of NPN power transistors produced by Microchip Technology. This family includes various qualification levels such as JAN, JANTX, and JANTXV. The JANS designation specifically denotes the highest level of radiation hardness and quality control within this product line, targeting defense and space industry applications.

Single Bipolar Transistors Replacement Considerations

Direct replacements must maintain the JANS radiation-hardened qualification. Equivalent parts from other manufacturers require rigorous validation against MIL-PRF-19500/455 specifications to ensure compatibility in radiation environments.

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$216.94
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