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JANSL2N3439 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is TRANS NPN 350V 1A TO39. Review the specifications below when checking this part for your BOM.
The JANSL2N3439 is a silicon NPN power bipolar junction transistor (BJT) manufactured by Microchip Technology. It is designed for high-voltage switching applications with a maximum collector-emitter voltage of 350 V and a continuous collector current rating of 1 A. The device features a maximum DC current gain of 30 and a transition frequency of 15 MHz. It operates within a junction temperature range of -65°C to +175°C and dissipates up to 1 W of power in a TO-39 metal can package.
Verify the specific suffix against official Microchip documentation to confirm radiation hardness and quality level requirements. Ensure the ordering information matches the exact electrical specifications required for the target application. Confirm compliance with relevant military standards before finalizing procurement decisions.
Select this component when high voltage isolation and wide operating temperature ranges are critical. The TO-39 package requires appropriate mounting considerations for thermal management. Verify that the 1 A current rating meets the load requirements without exceeding the 1 W power dissipation limit under worst-case conditions.
This part belongs to the 2N3439 family of high-voltage NPN transistors produced by Microchip Technology. It serves as a ruggedized alternative to commercial variants, offering enhanced reliability for specialized industrial and defense applications requiring stable performance under extreme environmental stress.
Consult official Microchip substitution guides for verified equivalents. Generic replacements may not match the specific radiation tolerance or quality certification levels required for this component.
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