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JANSL2N5151U3 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is TRANS PNP 80V 2A U3. Review the specifications below when checking this part for your BOM.
Single Bipolar Transistors specifications for JANSL2N5151U3
- Description：TRANS PNP 80V 2A U3
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：2:00 AM
- Voltage - Collector Emitter Breakdown (Max)：80 V
- Vce Saturation (Max) @ Ib, Ic：1.5V @ 500mA, 5A
- Current - Collector Cutoff (Max)：50µA
- DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 2.5A, 5V
- Power - Max：1.16 W
- Frequency - Transition：-
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：3-SMD, No Lead
- Supplier Device Package：U3
- Grade：-
- Qualification：-
Single Bipolar Transistors datasheet and documents for JANSL2N5151U3
Single Bipolar Transistors Overview
The JANSL2N5151U3 is a radiation-hardened PNP silicon power bipolar junction transistor manufactured by Microchip Technology. It features an 80V collector-emitter breakdown voltage and a continuous collector current of 2A. The device is housed in a low-profile ceramic surface-mount package designed for high thermal performance. Qualified under MIL-PRF-19500/545, it provides enhanced reliability for demanding environments.
Single Bipolar Transistors Feature Summary
- Radiation hardened to withstand up to 50K rads (Si) total ionizing dose
- Low profile ceramic surface mount construction for robust thermal management
- Qualified per MIL-PRF-19500/545 military specifications
Single Bipolar Transistors Applications
- Military aerospace systems requiring radiation tolerance
- High-reliability power switching circuits
- Harsh environment amplifier stages
Single Bipolar Transistors Procurement Notes
Verify the specific JANSL suffix confirms the 50K rads radiation hardness level against project requirements. Confirm the U3 package designation matches the intended PCB footprint. Ensure procurement channels are authorized for military-grade components subject to export controls.
Single Bipolar Transistors Selection Notes
Select this component when radiation hardness is mandatory for PNP power applications. Compare the 2A current rating against peak load demands. Evaluate the low-profile ceramic package constraints against available board space and thermal dissipation paths.
Single Bipolar Transistors Part Context
This part belongs to the 2N5151 family of radiation-hardened transistors. Variants include through-hole TO-205AD packages and other surface-mount options. The JANSL prefix specifically denotes the 50K rads qualification level within the broader Microchip radiation-hardened portfolio.
Single Bipolar Transistors Replacement Considerations
Direct substitutes include JANSL2N5151 in TO-205AD packaging or JANSD2N5151U3 for NPN polarity requirements. Verify pinout compatibility before substituting with non-Microchip equivalents.
Explore related parts through Bipolar (BJT), Transistors, Discrete Semiconductor Products, all product categories.
