Single Bipolar Transistors JANSP2N3637L product image

JANSP2N3637L

$110.15
  • Description:TRANS PNP 175V 1A TO-5AA
  • Series:-

SKU:d0f5476166f8 Category: Brand:

  
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JANSP2N3637L is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is TRANS PNP 175V 1A TO-5AA. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for JANSP2N3637L

  • Description:TRANS PNP 175V 1A TO-5AA
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):175 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max):10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 50mA, 10V
  • Power - Max:1 W
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package:TO-5AA
  • Grade:Military
  • Qualification:MIL-PRF-19500/357

Single Bipolar Transistors datasheet and documents for JANSP2N3637L

JANSP2N3637L

Single Bipolar Transistors Overview

The JANSP2N3637L is a PNP silicon small-signal transistor manufactured by Microchip Technology. It utilizes a TO-5 metal can package with three leads for through-hole mounting. The device supports a maximum continuous collector current of 1 A and withstands collector-emitter and collector-base voltages of 175 V each, with an emitter-base voltage rating of 5 V. Total power dissipation is rated at 5 W at 25°C ambient temperature. The component operates within a temperature range of -65°C to +200°C. DC current gain (hFE) ranges from a minimum of 55 to a maximum of 300.

Single Bipolar Transistors Feature Summary

  • Qualified under MIL-PRF-19500/357 standards for military reliability
  • Constructed using silicon technology in a hermetic metal TO-5 case
  • Capable of high-temperature operation up to +200°C

Single Bipolar Transistors Applications

  • Military aerospace electronic systems
  • High-reliability industrial control circuits
  • Harsh environment signal processing

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'SP' against official Microchip documentation to confirm space-grade or special process requirements. Ensure the ordering information matches the exact MIL-PRF-19500/357 qualification level required for the application. Cross-reference datasheet revisions to confirm pinout consistency with legacy designs.

Single Bipolar Transistors Selection Notes

Select this component when high-voltage handling and extreme temperature tolerance are critical. The TO-5 package provides robust mechanical stability for vibration-prone environments. Compare hFE specifications against circuit biasing requirements to ensure adequate gain margins under varying thermal conditions.

Single Bipolar Transistors Part Context

This part belongs to the 2N3637 series of low-power PNP transistors. The 'JAN' prefix indicates JANS (Space) grade qualification, while 'SP' typically denotes specific space-processing controls. These devices serve as replacements for older military-specification transistors in legacy defense and aerospace hardware.

Single Bipolar Transistors Replacement Considerations

Compatible substitutes include the JAN2N3637L and JANHC2N3637L. Verify that alternative manufacturers maintain identical MIL-PRF-19500/357 qualifications and TO-5 package dimensions for direct interchangeability.

JANSP2N3637LJANSP2N3637L
$110.15
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