Single Diodes JANTX1N5809URS/TR product image

JANTX1N5809URS/TR

$15.05
  • Description:DIODE STANDARD 100V 3A B SQMELF
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tape & Reel (TR)

SKU:d4b7ad380247 Category: Brand:

  
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JANTX1N5809URS/TR is listed in the Single Diodes range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is DIODE STANDARD 100V 3A B SQMELF. Review the specifications below when checking this part for your BOM.

Single Diodes specifications for JANTX1N5809URS/TR

  • Description:DIODE STANDARD 100V 3A B SQMELF
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tape & Reel (TR)
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):100 V
  • Current - Average Rectified (Io):3A
  • Voltage - Forward (Vf) (Max) @ If:875 mV @ 4 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):30 ns
  • Current - Reverse Leakage @ Vr:5 µA @ 100 V
  • Capacitance @ Vr, F:60pF @ 10V, 1MHz
  • Mounting Type:Surface Mount
  • Package / Case:SQ-MELF, B
  • Supplier Device Package:B, SQ-MELF
  • Operating Temperature - Junction:-65°C ~ 175°C
  • Grade:Military
  • Qualification:MIL-PRF-19500/477

Single Diodes datasheet and documents for JANTX1N5809URS/TR

JANTX1N5809URS/TR

Single Diodes Overview

The JANTX1N5809URS/TR is a silicon ultrafast recovery power rectifier diode manufactured by Microchip Technology. It features a single configuration with a maximum repetitive peak reverse voltage of 100 V and an average forward rectified current rating of 3 A. The device exhibits a fast recovery time of 30 ns and a low forward voltage drop of 875 mV at 4 A. It operates within a junction temperature range of -65°C to +175°C and has a maximum non-repetitive surge current capability of 125 A.

Single Diodes Feature Summary

  • Military-grade reliability qualification under MIL-PRF-19500/477K standards for high-reliability applications
  • Hermetically sealed void-less glass construction ensuring environmental stability
  • Ultrafast recovery characteristics optimized for high-frequency switching efficiency

Single Diodes Applications

  • High-reliability aerospace power conversion systems
  • Avionics rectification circuits requiring military qualification
  • Harsh environment electronic equipment protection

Single Diodes Procurement Notes

Verify the specific suffix URS against official Microchip documentation to confirm surface mount packaging and tape-and-reel delivery format. Ensure the JAN TX grade designation aligns with required quality assurance levels. Confirm RoHS status as non-compliant per standard military specifications. Validate that the hermetic seal integrity meets project environmental requirements before procurement.

Single Diodes Selection Notes

Select this component when military qualification and ultrafast recovery are mandatory. Compare the 100 V reverse voltage and 3 A current ratings against circuit demands. Consider the B-package or SQ-MELF form factor for board layout constraints. Evaluate thermal management needs given the wide operating temperature range and potential heat dissipation in high-frequency applications.

Single Diodes Part Context

This part belongs to the 1N58xx series of ultrafast recovery rectifiers, which includes variants like 1N5807 and 1N5811. The JANTX grade indicates enhanced screening beyond standard JAN levels. The URS suffix typically denotes a specific surface-mount package variant within the hermetically sealed family, distinct from through-hole equivalents.

Single Diodes Replacement Considerations

Direct substitutes include other JANTX1N5809 variants with compatible packaging. Verify electrical equivalence for 100 V, 3 A ultrafast recovery diodes. Cross-reference MIL-PRF-19500/477K qualified parts from authorized manufacturers. Ensure pinout and mechanical dimensions match existing footprints.

JANTX1N5809URS/TRJANTX1N5809URS/TR
$15.05
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