Single Bipolar Transistors JANTX2N3636 product image

JANTX2N3636

$9.43
  • Description:TRANS PNP 175V 1A TO39
  • Series:-

SKU:b2b03c4575a8 Category: Brand:

  
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JANTX2N3636 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is TRANS PNP 175V 1A TO39. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for JANTX2N3636

  • Description:TRANS PNP 175V 1A TO39
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):175 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max):10µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 50mA, 10V
  • Power - Max:1 W
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package:TO-39 (TO-205AD)
  • Grade:Military
  • Qualification:MIL-PRF-19500/357

Single Bipolar Transistors datasheet and documents for JANTX2N3636

JANTX2N3636

Single Bipolar Transistors Overview

The JANTX2N3636 is a silicon PNP small-signal bipolar junction transistor (BJT) manufactured by Microchip Technology. It features a maximum collector-emitter voltage of 175 V and a maximum DC collector current of 1 A. The device operates within a temperature range of -65°C to +200°C and has a power dissipation rating of 1 W. It utilizes a TO-5-3 metal can package for through-hole mounting.

Single Bipolar Transistors Feature Summary

  • High voltage capability with 175 V collector-emitter breakdown
  • Extended thermal operation up to 200°C junction temperature
  • Robust 1 A continuous collector current handling
  • Military-grade reliability in hermetic metal can packaging

Single Bipolar Transistors Applications

  • High-voltage switching circuits
  • Power amplification stages
  • Harsh environment control systems
  • Military aerospace electronics

Single Bipolar Transistors Procurement Notes

Verify the specific revision level and lot traceability requirements before procurement, as military-grade components often require strict documentation. Confirm that the TO-5-3 package dimensions match your PCB or chassis layout constraints. Ensure that the supplier provides valid certification for the JANTX grade to guarantee compliance with specified electrical parameters and environmental testing standards.

Single Bipolar Transistors Selection Notes

Select this component when high voltage isolation and wide temperature tolerance are critical. Compare against standard commercial BJTs if operating conditions exceed 175 V or 1 A limits. Consider the TO-5-3 package size relative to available board space. Verify that the PNP configuration aligns with the circuit logic requirements.

Single Bipolar Transistors Part Context

This part belongs to the 2N3636 family of high-voltage PNP transistors designed for demanding applications. It serves as a rugged alternative to lower-rated commercial devices, offering superior performance in environments subject to extreme temperatures and radiation exposure typical of defense and space missions.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include the 2N3636 standard commercial version for non-military use. Other compatible parts may include similar high-voltage PNP transistors from the same manufacturer family, provided they meet the 175 V and 1 A specifications.

JANTX2N3636JANTX2N3636
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