JANTX2N6058

Single Bipolar Transistors Overview

The JANTX2N6058 is an NPN silicon power Darlington transistor manufactured by Microchip Technology. It operates with a collector-emitter voltage of 100V and supports a continuous collector current of 12A. The device features a total power dissipation rating of 150W at case temperature of 25°C. It utilizes a TO-3 through-hole package with the case connected to the collector. This component complies with MIL-PRF-19500/502F specifications, superseding MIL-PRF-19500/502E, ensuring rigorous performance standards for military-grade applications.

Single Bipolar Transistors Feature Summary

• High-current capability suitable for demanding power switching environments
• Robust thermal management via metal TO-3 package construction
• Compliance with stringent MIL-PRF-19500/502F reliability standards

Single Bipolar Transistors Applications

• Power linear amplifier circuits
• Low frequency switching applications
• Military-grade electronic systems requiring high reliability

Single Bipolar Transistors Procurement Notes

Verify that the specific ordering suffix matches the required qualification level under MIL-PRF-19500/502F. Confirm package integrity and pin configuration compatibility with existing board layouts. Ensure thermal interface materials are rated for the specified operating temperatures. Check for recent Product Change Notifications (PCN) regarding manufacturing site or material updates. Validate compliance with export control classifications such as EAR99 before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when high gain and substantial current handling are required in a ruggedized form factor. The TO-3 package provides superior heat dissipation compared to plastic alternatives. Consider the complementary 2N6059 for push-pull configurations if higher voltage ratings are needed. Evaluate thermal resistance requirements against the system's heat sink capabilities. Ensure the application does not exceed the maximum junction temperature limits defined in the datasheet.

Single Bipolar Transistors Part Context

This part belongs to the 2N6058/2N6059 series of silicon NPN power Darlington transistors. It is designed as a complement to other devices in the family, offering high current gain and power dissipation. The series is widely used in industrial and military electronics where reliability under harsh conditions is critical. Microchip Technology maintains production standards consistent with historical military specifications for these legacy parts.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include the standard 2N6058 variant. Verify electrical parameters match exactly, particularly the 100V collector-emitter voltage and 12A current rating. Ensure the replacement also meets MIL-PRF-19500/502F qualifications if military grade is required. Check for any physical dimension differences in the TO-3 package to ensure mechanical fit.