Diode Arrays JANTXV1N5711UBD/TR product image

JANTXV1N5711UBD/TR

$88.94
  • Description:DIODE ARRAY SCHOTTKY 50V 33MA UB
  • Series:-

SKU:5de641c3678d Category: Brand:

  
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JANTXV1N5711UBD/TR is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is DIODE ARRAY SCHOTTKY 50V 33MA UB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for JANTXV1N5711UBD/TR

  • Description:DIODE ARRAY SCHOTTKY 50V 33MA UB
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tape & Reel (TR)
  • Diode Configuration:1 Pair Series Connection
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):50 V
  • Current - Average Rectified (Io) (per Diode):33mA
  • Voltage - Forward (Vf) (Max) @ If:1 V @ 15 mA
  • Speed:Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:200 nA @ 50 V
  • Operating Temperature - Junction:-65°C ~ 150°C
  • Mounting Type:Surface Mount
  • Package / Case:3-SMD, No Lead
  • Supplier Device Package:UB
  • Grade:Military
  • Qualification:MIL-PRF-19500/444

Diode Arrays datasheet and documents for JANTXV1N5711UBD/TR

JANTXV1N5711UBD/TR

Diode Arrays Overview

The JANTXV1N5711UBD/TR is a silicon Schottky barrier diode manufactured by Microchip Technology. It features a unidirectional configuration in a UB surface-mount package, qualified to MIL-PRF-19500/444 standards for high-reliability applications. The device supports a maximum repetitive reverse voltage of 50 V and an average forward current of 33 mA. Key electrical characteristics include a maximum forward voltage of 1 V at 15 mA and a reverse leakage current of 200 nA at 50 V. It operates within a junction temperature range of -65°C to +150°C.

Diode Arrays Feature Summary

  • Military-grade qualification compliant with MIL-PRF-19500/444 specifications
  • Low forward voltage drop characteristic typical of Schottky technology
  • High breakdown voltage capability suitable for signal detection
  • Ceramic encapsulation providing robust environmental protection

Diode Arrays Applications

  • High-reliability UHF/VHF detection circuits
  • Pulse application systems requiring fast switching
  • Space and defense electronics assemblies
  • High-frequency rectification tasks

Diode Arrays Procurement Notes

Verify the specific suffix designation against official Microchip documentation to confirm exact packaging and qualification levels. Ensure the procurement channel provides valid military lot traceability and certification. Confirm RoHS status requirements as military variants may differ from commercial equivalents. Validate that the supplier can provide necessary quality documentation for regulated sectors.

Diode Arrays Selection Notes

Select this component when MIL-PRF-19500/444 compliance is mandatory for the design. Choose the UB package for surface-mount assembly constraints. Consider the 33 mA current limit for low-power signal processing. Evaluate the -65°C to +150°C operating range against environmental stress conditions. Compare performance against standard commercial diodes if military qualification is not required.

Diode Arrays Part Context

This part belongs to the 1N5711 family of Schottky barrier diodes produced by Microchip Technology. It serves as the surface-mount equivalent of the axial-leaded 1N5711. The JANTXV suffix indicates a specific military reliability tier within the broader product line. The series is designed for applications demanding high reliability and fast switching speeds in harsh environments.

Diode Arrays Replacement Considerations

The 1N5711UB is the direct axial-to-surface-mount functional equivalent within the same qualification family. Verify pinout compatibility and thermal management requirements when substituting. Ensure the replacement meets the same MIL-PRF-19500/444 level if military specs are enforced.

JANTXV1N5711UBD/TRJANTXV1N5711UBD/TR
$88.94
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