Single Bipolar Transistors JANTXV2N2219L product image

JANTXV2N2219L

$7.99
  • Description:TRANS NPN 50V 0.8A TO-5AA
  • Series:-

SKU:dc3315545970 Category: Brand:

  
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JANTXV2N2219L is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is TRANS NPN 50V 0.8A TO-5AA. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for JANTXV2N2219L

  • Description:TRANS NPN 50V 0.8A TO-5AA
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):800 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max):10nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V
  • Power - Max:800 mW
  • Frequency - Transition:-
  • Operating Temperature:-55°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-205AA, TO-5-3 Metal Can
  • Supplier Device Package:TO-5AA
  • Grade:Military
  • Qualification:MIL-PRF-19500/251

Single Bipolar Transistors datasheet and documents for JANTXV2N2219L

JANTXV2N2219L

Single Bipolar Transistors Overview

The JANTXV2N2219L is an NPN silicon switching transistor manufactured by Microchip Technology, conforming to MIL-PRF-19500/251R. It features a TO-39-3 through-hole package with a maximum DC collector current of 800 mA and a collector-emitter voltage (VCEO) of 30 V. The device supports a power dissipation of 3 W and operates within a temperature range of -55°C to +200°C. Key electrical parameters include a collector-base voltage (VCBO) of 60 V, emitter-base voltage (VEBO) of 5 V, and a saturation voltage of 400 mV. Current gain ranges from a minimum of 35 at 100 uA/10 V to a maximum of 325 at 1 mA/10 V.

Single Bipolar Transistors Feature Summary

  • Complies with MIL-PRF-19500/251R for high-reliability military specifications
  • Designed for extreme thermal environments with operation up to +200°C
  • Utilizes a hermetically sealed TO-39 metal can package

Single Bipolar Transistors Applications

  • Military aerospace switching circuits
  • High-temperature industrial control systems
  • Radiation-hardened electronic assemblies

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'L' against the official Microchip datasheet to confirm lead frame or plating variations. Ensure procurement channels provide traceable documentation compliant with MIL-PRF-19500/251R standards. Confirm that the component meets all required radiation hardening assurance levels if applicable to the design.

Single Bipolar Transistors Selection Notes

Select this component when designing for harsh environments requiring extended temperature stability beyond standard commercial limits. The TO-39 package provides robust mechanical protection suitable for vibration-prone applications. Verify that the 30 V rating and 800 mA current capacity align with the circuit's peak load requirements.

Single Bipolar Transistors Part Context

This part belongs to the 2N2219 family of NPN silicon switching transistors produced under military quality standards. The 'JANTXV' designation indicates a specific reliability level within the MIL-PRF-19500 framework. These devices are engineered for critical applications where standard commercial components would fail due to environmental stress or radiation exposure.

Single Bipolar Transistors FAQ

What does the 'L' suffix indicate in the JANTXV2N2219L part number?

The 'L' suffix typically denotes a specific lead finish or packaging variation defined by the manufacturer. Consult the official datasheet to verify the exact material specification associated with this suffix.

Is the JANTXV2N2219L radiation hardened?

Yes, parts designated with the JANTXV prefix under MIL-PRF-19500/251R are generally radiation hardened. Specific RHA levels may be indicated by additional letters such as M, D, P, L, R, F, G, or H preceding the device prefix.

JANTXV2N2219LJANTXV2N2219L
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