Single Bipolar Transistors KSC1008OTA product image

KSC1008OTA

  • Description:TRANS NPN 60V 0.7A TO-92-3
  • Series:-

SKU:457fe697d50a Category: Brand:

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KSC1008OTA is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 60V 0.7A TO-92-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for KSC1008OTA

  • Description:TRANS NPN 60V 0.7A TO-92-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Box (TB)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):700 mA
  • Voltage - Collector Emitter Breakdown (Max):60 V
  • Vce Saturation (Max) @ Ib, Ic:400mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 50mA, 2V
  • Power - Max:800 mW
  • Frequency - Transition:50MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package:TO-92-3

Single Bipolar Transistors datasheet and documents for KSC1008OTA

KSC1008OTA

Single Bipolar Transistors Overview

The KSC1008OTA is an NPN epitaxial silicon transistor manufactured by onsemi, designed for low-frequency amplifier and medium-speed switching applications. It features a collector-base voltage of 80 V, a collector-emitter voltage of 60 V, and a maximum collector current of 700 mA. The device operates with a power dissipation of 800 mW and has a transition frequency of 50 MHz. It utilizes a TO-92-3 package with kinked leads (Side Collector configuration) and is supplied in Ammo Pack format.

Single Bipolar Transistors Feature Summary

  • Designed for low-frequency amplification and medium-speed switching operations
  • Features high collector-base breakdown voltage capability
  • Complements the KSA708 PNP transistor within the same product family

Single Bipolar Transistors Applications

  • Low-frequency amplifier circuits
  • Medium-speed switching applications

Single Bipolar Transistors Procurement Notes

Verify that the ordering suffix matches the required pinout configuration, as non-suffix variants utilize side collectors while C-suffixes use center collectors. Confirm the hFE classification suffix aligns with circuit gain requirements. Ensure the TA suffix corresponds to the specified Ammo Pack shipping format rather than bulk packaging options.

Single Bipolar Transistors Selection Notes

Select this component when a robust NPN transistor with high collector-base voltage is required for general-purpose amplification or switching tasks. Consider the specific lead configuration and hFE binning needed for the target application. Evaluate thermal management requirements against the 800 mW power dissipation limit during operation.

Single Bipolar Transistors Part Context

This part belongs to the KSC1008 series of NPN epitaxial transistors produced by onsemi. It serves as the complementary counterpart to the KSA708 PNP transistor. The series is engineered for reliable performance in standard through-hole mounting configurations suitable for various electronic designs.

Single Bipolar Transistors Replacement Considerations

  • KSC1008OBU
  • KSC1008YBU
  • KSC1008GTA

Single Bipolar Transistors FAQ

What is the pin configuration for the KSC1008OTA?

The KSC1008OTA uses the Side Collector configuration, where Pin 1 is Emitter, Pin 2 is Base, and Pin 3 is Collector.

Is the KSC1008OTA RoHS compliant?

Yes, the datasheet explicitly states that these are Pb-Free devices.

What is the maximum junction temperature for this transistor?

The maximum junction temperature (TJ) is rated at 150°C.

KSC1008OTAKSC1008OTA

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