KSC1507YTSTU

Single Bipolar Transistors Overview

The KSC1507YTSTU is an NPN epitaxial silicon transistor designed for high-voltage applications. It features a collector-emitter voltage (VCEO) of 300 V and a collector-base voltage (VCBO) of 300 V. The device supports a maximum collector current of 0.2 mA and offers a DC current gain (hFE) ranging from 40 to 240, depending on the classification bin. Key electrical parameters include a minimum current gain bandwidth product (fT) of 40 MHz and a collector dissipation of 15 W at 25°C case temperature. The component is housed in a TO-220 package.

Single Bipolar Transistors Feature Summary

• High collector-emitter voltage rating of 300 V suitable for demanding circuit environments
• Defined hFE classification bins (R, O, Y) ensuring consistent current gain performance
• Current gain bandwidth product of 40 MHz minimum for signal processing stability

Single Bipolar Transistors Applications

• Color TV chroma output stages
• High-voltage switching circuits
• General-purpose amplifier applications requiring 300 V isolation

Single Bipolar Transistors Procurement Notes

Verify the specific hFE classification suffix (Y) corresponds to the required gain range (120–240) for your design. Confirm the TO-220 package dimensions match your thermal management requirements. Ensure the manufacturer source is recognized, as Fairchild Semiconductor assets are now part of ON Semiconductor. Check for any lifecycle status updates regarding production availability.

Single Bipolar Transistors Selection Notes

Select this component when a 300 V NPN transistor with moderate current handling is required. The TO-220 package facilitates efficient heat dissipation for power dissipation up to 15 W. Consider the hFE bin selection based on the necessary amplification factor. Verify that the 0.2 mA collector current limit meets the load requirements of the target application.

Single Bipolar Transistors Part Context

The KSC1507 series consists of NPN epitaxial silicon transistors manufactured by Fairchild Semiconductor. These devices are engineered for robust performance in color television chroma output circuits. The family includes variants differentiated by hFE gain classifications. The TO-220 package provides a standardized form factor for through-hole mounting and effective thermal conduction.

Single Bipolar Transistors Replacement Considerations

Direct substitutes must match the 300 V VCEO rating, NPN configuration, and TO-220 package. Verify equivalent hFE ranges and fT specifications. Cross-reference with ON Semiconductor equivalents if Fairchild parts are discontinued.