KSC2310YTA

Single Bipolar Transistors Overview

The KSC2310YTA is an NPN epitaxial silicon transistor designed for high voltage power amplifier applications. It features a collector-base voltage of 200 V and a collector-emitter voltage of 150 V, with a maximum collector current of 50 mA and power dissipation of 800 mW at 25°C. The device offers a current gain bandwidth product of 100 MHz and a DC current gain ranging from 40 to 240 depending on the Y classification suffix. Packaged in TO-92L, it operates within a junction temperature range up to 150 °C.

Single Bipolar Transistors Feature Summary

• High voltage capability with a 200 V collector-base breakdown rating
• Wide current gain bandwidth product of 100 MHz suitable for RF amplification
• Optimized for low noise and high linearity in power amplifier circuits

Single Bipolar Transistors Applications

• High voltage power amplifiers
• RF driver stages
• General purpose switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific 'Y' hFE classification (70–140) required for your circuit design against the datasheet specifications. Confirm the package type matches the TO-92L footprint dimensions provided. Ensure the component meets the absolute maximum ratings for your operating conditions, particularly regarding thermal management and junction temperature limits.

Single Bipolar Transistors Selection Notes

Select this component when a high voltage NPN transistor with moderate current handling is required. The 100 MHz bandwidth makes it suitable for RF applications where standard transistors may lack sufficient frequency response. Consider the Y binning for consistent gain performance in amplifier designs requiring predictable hFE values.

Single Bipolar Transistors Part Context

The KSC2310 series consists of NPN epitaxial silicon transistors manufactured by Fairchild Semiconductor, now part of onsemi. These devices are engineered for robust performance in high voltage environments. The TO-92L package provides a compact form factor suitable for through-hole mounting in various electronic assemblies.

Single Bipolar Transistors Replacement Considerations

Consult official cross-reference lists for verified substitutes. Generic replacements must match the 200 V CBO, 150 V CEO, and 100 MHz fT specifications to ensure functional compatibility in existing designs.