Single Bipolar Transistors KSC815CYBU product image

KSC815CYBU

$0.02
  • Description:TRANS NPN 45V 0.2A TO-92-3
  • Series:-

SKU:555fd80444a7 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

KSC815CYBU is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 45V 0.2A TO-92-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for KSC815CYBU

  • Description:TRANS NPN 45V 0.2A TO-92-3
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):200 mA
  • Voltage - Collector Emitter Breakdown (Max):45 V
  • Vce Saturation (Max) @ Ib, Ic:400mV @ 15mA, 150mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 50mA, 1V
  • Power - Max:400 mW
  • Frequency - Transition:200MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92-3

Single Bipolar Transistors datasheet and documents for KSC815CYBU

KSC815CYBU

Single Bipolar Transistors Overview

The KSC815CYBU is an NPN epitaxial silicon transistor manufactured by onsemi. It features a collector-base voltage of 60 V, a collector-emitter voltage of 45 V, and a maximum collector current of 200 mA. The device operates with a maximum power dissipation of 400 mW and a junction temperature up to 150 °C. It utilizes a TO-92 package with three leads. The DC current gain ranges from 40 to 400 depending on the classification suffix.

Single Bipolar Transistors Feature Summary

  • Designed for low frequency amplifier and high frequency oscillator applications
  • Features center collector pin configuration for specific lead arrangements
  • Acts as a complement to the KSA539 PNP transistor

Single Bipolar Transistors Applications

  • Low frequency amplification circuits
  • High frequency oscillator designs

Single Bipolar Transistors Procurement Notes

Verify the ordering suffix carefully, as it dictates the physical lead arrangement. The 'C' suffix indicates a center collector configuration (Emitter, Collector, Base), while the absence of the suffix denotes a side collector layout. Confirm the specific hFE bin required for your circuit design before procurement.

Single Bipolar Transistors Selection Notes

Select this component when a standard NPN switching or amplifying transistor is needed in a compact through-hole package. Ensure the application voltage does not exceed the 45 V collector-emitter rating. Consider the thermal resistance of 310 °C/W when designing heat dissipation strategies for continuous operation.

Single Bipolar Transistors Part Context

This part belongs to the KSC series of small-signal transistors produced by onsemi following its acquisition of Fairchild Semiconductor. The datasheet notes that Fairchild order numbers containing underscores were updated to dashes to align with onsemi's system requirements. This component represents a legacy product line now managed under the onsemi portfolio.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the KSA539 as the complementary PNP transistor. No other direct substitute part numbers are documented in the provided source material.

KSC815CYBUKSC815CYBU
$0.02
Buy Now

Recent News