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KSD1616AGTA is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 60V 1A TO-92-3. Review the specifications below when checking this part for your BOM.
The KSD1616AGTA is an NPN epitaxial silicon transistor manufactured by onsemi, housed in a TO-92-3 (CASE 135AR) lead-frame package. It supports a maximum collector current of 1 A and a collector-emitter voltage of 60 V. The device features a transition frequency of 160 MHz at 100 mA and a total power dissipation of 750 mW. DC current gain ranges from 200 to 400 for the 'G' classification. It serves as a complement to the KSB1116/KSB1116A PNP transistors.
Verify the specific ordering suffix against official documentation to confirm packaging type and compliance status. Confirm that the component meets RoHS requirements and check for any discontinuation notices or alternative part numbers provided by the manufacturer before finalizing procurement plans.
Select this component when designing circuits requiring an NPN transistor with a 60 V collector-emitter breakdown voltage and 1 A continuous current capability. Ensure the application operates within the specified thermal limits and utilizes the appropriate hFE binning for required gain consistency.
This component belongs to the KSD1616 family of NPN epitaxial silicon transistors produced by onsemi. It is specifically engineered to pair with complementary PNP devices like the KSB1116 series for push-pull configurations in audio and switching applications.
The datasheet identifies the KSB1116 and KSB1116A as complementary parts. Verify pinout compatibility and electrical parameters against other NPN transistors in the TO-92-3 package if substituting.
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