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KSD882YSTSSTU is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 30V 3A TO-126-3. Review the specifications below when checking this part for your BOM.
The KSD882YSTSSTU is an NPN epitaxial silicon transistor manufactured by onsemi, designed for low-speed switching applications. It features a collector-emitter voltage of 30 V and a continuous collector current rating of 3 A. The device offers a DC current gain ranging from 60 to 400 depending on the hFE grade, with a typical current gain bandwidth product of 90 MHz. It operates within a junction temperature range of -55°C to +150°C and utilizes a TO-126-3LD (CASE 340AS) package.
Verify the specific hFE grade suffix required for your application, as performance varies across classifications. Confirm that the TO-126-3LD package matches your thermal management requirements. Ensure compliance with RoHS standards if applicable to your manufacturing process. Validate all electrical parameters against your circuit design limits before finalizing procurement.
Select this component when a rugged NPN medium-power transistor is needed for audio or general-purpose switching circuits. Consider the complementary KSB772 for push-pull configurations. Evaluate the hFE classification based on the required base drive current and gain stability. Ensure the TO-126-3LD package fits the available PCB space and thermal dissipation needs.
This part belongs to onsemi's lineup of low-voltage NPN medium-power transistors. It is specifically engineered using planar technology to provide high performance and ruggedness. The device is often paired with its PNP complement, the KSB772, to form complete amplifier stages or switching pairs in various electronic designs.
The KSB772 serves as the direct complementary replacement for PNP applications. Other NPN transistors with similar voltage and current ratings may be considered if pinout compatibility is verified.
The maximum continuous DC collector current is 3 A, with a pulsed collector current rating of 7 A.
Yes, the datasheet explicitly states that the KSD882 is the complementary device to the KSB772 PNP transistor.
The junction and storage temperature range is -55°C to +150°C.
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