Single Bipolar Transistors KSD882YSTSSTU product image

KSD882YSTSSTU

$0.09
  • Description:TRANS NPN 30V 3A TO-126-3
  • Series:-

SKU:7d4f3ca3bdc4 Category: Brand:

  
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KSD882YSTSSTU is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 30V 3A TO-126-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for KSD882YSTSSTU

  • Description:TRANS NPN 30V 3A TO-126-3
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):3:00 AM
  • Voltage - Collector Emitter Breakdown (Max):30 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 200mA, 2A
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 1A, 2V
  • Power - Max:1 W
  • Frequency - Transition:90MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-225AA, TO-126-3
  • Supplier Device Package:TO-126-3

Single Bipolar Transistors datasheet and documents for KSD882YSTSSTU

KSD882YSTSSTU

Single Bipolar Transistors Overview

The KSD882YSTSSTU is an NPN epitaxial silicon transistor manufactured by onsemi, designed for low-speed switching applications. It features a collector-emitter voltage of 30 V and a continuous collector current rating of 3 A. The device offers a DC current gain ranging from 60 to 400 depending on the hFE grade, with a typical current gain bandwidth product of 90 MHz. It operates within a junction temperature range of -55°C to +150°C and utilizes a TO-126-3LD (CASE 340AS) package.

Single Bipolar Transistors Feature Summary

  • Complementary to the KSB772 PNP transistor
  • Low saturation voltage characteristics
  • High current capability

Single Bipolar Transistors Applications

  • Audio frequency power amplifiers

Single Bipolar Transistors Procurement Notes

Verify the specific hFE grade suffix required for your application, as performance varies across classifications. Confirm that the TO-126-3LD package matches your thermal management requirements. Ensure compliance with RoHS standards if applicable to your manufacturing process. Validate all electrical parameters against your circuit design limits before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when a rugged NPN medium-power transistor is needed for audio or general-purpose switching circuits. Consider the complementary KSB772 for push-pull configurations. Evaluate the hFE classification based on the required base drive current and gain stability. Ensure the TO-126-3LD package fits the available PCB space and thermal dissipation needs.

Single Bipolar Transistors Part Context

This part belongs to onsemi's lineup of low-voltage NPN medium-power transistors. It is specifically engineered using planar technology to provide high performance and ruggedness. The device is often paired with its PNP complement, the KSB772, to form complete amplifier stages or switching pairs in various electronic designs.

Single Bipolar Transistors Replacement Considerations

The KSB772 serves as the direct complementary replacement for PNP applications. Other NPN transistors with similar voltage and current ratings may be considered if pinout compatibility is verified.

Single Bipolar Transistors FAQ

What is the maximum collector current for the KSD882?

The maximum continuous DC collector current is 3 A, with a pulsed collector current rating of 7 A.

Is the KSD882 compatible with the KSB772?

Yes, the datasheet explicitly states that the KSD882 is the complementary device to the KSB772 PNP transistor.

What is the operating temperature range?

The junction and storage temperature range is -55°C to +150°C.

KSD882YSTSSTUKSD882YSTSSTU
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