Single Bipolar Transistors KSE3055T product image

KSE3055T

  • Description:TRANS NPN 60V 10A TO-220-3
  • Series:-

SKU:71db65506980 Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

KSE3055T is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 60V 10A TO-220-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for KSE3055T

  • Description:TRANS NPN 60V 10A TO-220-3
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):10:00 AM
  • Voltage - Collector Emitter Breakdown (Max):60 V
  • Vce Saturation (Max) @ Ib, Ic:8V @ 3.3A, 10A
  • Current - Collector Cutoff (Max):700µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 4A, 4V
  • Power - Max:600 mW
  • Frequency - Transition:2MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220-3

Single Bipolar Transistors datasheet and documents for KSE3055T

KSE3055T

Single Bipolar Transistors Overview

The KSE3055T is an NPN silicon epitaxial-base transistor designed for general-purpose and switching applications. It features a collector-emitter voltage of 60 V, a collector current rating of 10 A, and a maximum power dissipation of 75 W at 25°C case temperature. The device operates within a junction temperature range of -55°C to 150°C. Key electrical characteristics include a DC current gain (hFE) ranging from 5 to 100 at 4 A, a collector-emitter saturation voltage of 1.1 V at 4 A, and a transition frequency (fT) of 2 MHz.

Single Bipolar Transistors Feature Summary

  • High current capability with a 10 A collector current rating
  • Optimized for high-speed switching with a 2 MHz transition frequency
  • Robust thermal performance supporting up to 75 W power dissipation

Single Bipolar Transistors Applications

  • General-purpose amplifiers
  • Power switching circuits
  • DC-DC converter topologies

Single Bipolar Transistors Procurement Notes

Verify the manufacturer origin carefully, as this component was originally produced by Fairchild Semiconductor. Confirm that the specific revision level matches your design requirements. Ensure the TO-220 package dimensions align with your PCB footprint specifications before finalizing procurement decisions.

Single Bipolar Transistors Selection Notes

Select this component when a robust NPN transistor is required for medium-power switching tasks. Its high hFE specification ensures efficient drive requirements at high currents. Consider the thermal management capabilities provided by the TO-220 package for effective heat dissipation in your specific application environment.

Single Bipolar Transistors Part Context

This part belongs to the family of low-voltage NPN power transistors. It serves as the complementary counterpart to PNP devices like the KSE2955T. These pairs are commonly utilized in push-pull amplifier stages and motor control circuits where matched performance characteristics between NPN and PNP types are beneficial.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include the MJE3055T and MJD3055T. Verify pinout compatibility and thermal resistance values when transitioning between these equivalent parts.

KSE3055TKSE3055T

Click on the inquiry

Recent News