L6384D

L6384D

$1.79
  • Description:IC GATE DRVR HALF-BRIDGE 8SO
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Tube

SKU:7aaf676cfff5 Category: Brand:

  
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Product Detailed Parameters

  • Description:IC GATE DRVR HALF-BRIDGE 8SO
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Tube
  • Driven Configuration:Half-Bridge
  • Channel Type:Synchronous
  • Number of Drivers:2
  • Gate Type:IGBT, MOSFET (N-Channel)
  • Voltage - Supply:14.6V ~ 16.6V
  • Logic Voltage - VIL, VIH:1.5V, 3.6V
  • Current - Peak Output (Source, Sink):400mA, 650mA
  • Input Type:Inverting
  • Rise / Fall Time (Typ):50ns, 30ns
  • Operating Temperature:-45°C ~ 125°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-
  • High Side Voltage - Max (Bootstrap):600 V

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L6384D

Overview

The L6384D is a high-voltage half-bridge gate driver manufactured using BCD offline technology. It drives N-channel power MOSFETs or IGBTs with a floating high-side section rated for voltage rails up to 600 V. The device features dual outputs capable of sourcing 400 mA and sinking 650 mA, ensuring robust switching performance. Logic inputs are compatible with CMOS and TTL standards. Key specifications include a supply voltage range of 14.6 V to 16.6 V, rise and fall times of 50 ns and 30 ns respectively, and an operating temperature range from -45 °C to +125 °C.

Feature Summary

  • High-voltage rail capability up to 600 V for floating high-side operation
  • Integrated deadtime function tunable via external resistor to prevent cross-conduction
  • Built-in bootstrap diode and UVLO protection for reliable system integration
  • CMOS/TTL Schmitt trigger inputs with hysteresis for noise immunity

Applications

  • Driving half-bridge configurations of power MOSFETs
  • Driving half-bridge configurations of IGBT devices
  • High-frequency power conversion circuits requiring synchronized switching

Procurement Notes

Verify component authenticity through authorized STMicroelectronics distributors. Confirm package type matches design requirements, as variants exist in DIP-8 and SO-8 formats. Check manufacturing status carefully; the L6384D may be obsolete compared to the L6384ED series. Ensure compatibility with control logic levels before finalizing procurement.

Selection Notes

Select this component for applications requiring high dV/dt immunity and precise deadtime control. Consider the L6384ED series if current availability is critical, as the L6384D may be discontinued. Evaluate thermal dissipation capabilities against the 750 mW power rating. Verify that the integrated bootstrap diode meets the application's voltage and current requirements without external components.

Part Context

The L6384D belongs to the L638xE family of high-voltage gate drivers designed for offline applications. It utilizes BCD technology to integrate high-voltage and low-voltage functions on a single chip. This family simplifies the design of isolated power stages by providing matched delays between high-side and low-side sections, facilitating efficient operation in motor drives and power supplies.

Replacement Considerations

The L6384ED is a confirmed substitute part number for the L6384D. Both components share identical electrical characteristics and pinouts. The primary difference lies in packaging options and manufacturing status. The L6384ED is actively produced, whereas the L6384D may be obsolete. Cross-reference datasheets to ensure mechanical fit.

L6384DL6384D
$1.79
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