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LMG3410R050RWHT is listed in the Power Distribution Switches, Load Drivers range at ChipApex. The manufacturer field lists Texas Instruments. Its product description is SMART 50MOHM GAN FET WITH DRIV. Review the specifications below when checking this part for your BOM.
The LMG3410R050RWHT is a 600-V GaN power stage from Texas Instruments, integrating a 50-mΩ N-channel FET with an optimized gate driver in a low-inductance 32-VQFN package. It features latch-type overcurrent protection and supports user-adjustable slew rates from 25 V/ns to 100 V/ns for EMI control. The device operates with a non-stabilized +12-V supply and includes comprehensive protections such as over-temperature shutdown, UVLO, and transient overvoltage immunity.
Verify the specific suffix RWHT against official Texas Instruments documentation to confirm the reel tape packaging configuration. Ensure compatibility with moisture sensitivity level requirements during storage and handling. Cross-reference the exact part number with current datasheets to validate any recent design or specification changes before procurement.
Select this component when latch-type overcurrent protection is required rather than cycle-by-cycle limiting. It is suitable for designs needing integrated GaN solutions with adjustable EMI control. Consider the 32-VQFN footprint for layout constraints and verify that the +12-V non-stabilized supply requirement aligns with the system's power architecture.
This device belongs to the LMG341xR050 series of Gallium Nitride power stages. It serves as a direct replacement for traditional common-source-gate GaN and discrete GaN FETs, offering superior system performance through integrated drive and protection. The series is designed to simplify power electronics design while maximizing reliability and efficiency in dense applications.
LMG3411R050RWHT offers cycle-by-cycle overcurrent protection instead of latch-type. LMG3410R070 variants provide 70-mΩ on-resistance with similar driver integration but different electrical characteristics.
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