Diode Arrays LQA10T200C product image

LQA10T200C

$0.60
  • Description:DIODE ARRAY GP 200V 5A TO-220AB
  • Series:Qspeed™

SKU:9835b16d2c4a Category: Brand:

  
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LQA10T200C is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Power Integrations. Its product description is DIODE ARRAY GP 200V 5A TO-220AB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for LQA10T200C

  • Description:DIODE ARRAY GP 200V 5A TO-220AB
  • Series:Qspeed™
  • Mfr:Power Integrations
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):200 V
  • Current - Average Rectified (Io) (per Diode):5A
  • Voltage - Forward (Vf) (Max) @ If:1.1 V @ 5 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):13.9 ns
  • Current - Reverse Leakage @ Vr:250 µA @ 200 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220AB
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for LQA10T200C

LQA10T200C

Diode Arrays Overview

The LQA10T200C is a Qspeed™ family common-cathode rectifier diode manufactured by Power Integrations. It features a peak repetitive reverse voltage (VRRM) of 200 V and an average forward current (IF(AVG)) of 5 A per diode. The device exhibits a typical reverse recovery charge (QRR) of 32.4 nC at 125 °C and a maximum non-repetitive peak surge current of 60 A. Packaged in TO-220AB, it operates within a junction temperature range of –55 to 150 °C.

Diode Arrays Feature Summary

  • Low reverse recovery charge (QRR), low reverse recovery current (IRRM), and low reverse recovery time (tRR)
  • Capable of high dIF/dt switching rates up to 1000A/µs
  • Soft recovery waveform characteristics

Diode Arrays Applications

  • AC/DC and DC/DC output rectification
  • Output and freewheeling diodes
  • Motor drive circuits
  • DC-AC inverters

Diode Arrays Procurement Notes

Verify the specific package type during procurement, as the 'LQA10T200C' designation corresponds to the TO-220AB through-hole package. Confirm that the ordering suffix matches the required physical form factor for your assembly process. Ensure compliance with RoHS standards and lead-free plating requirements specified in the datasheet before finalizing component selection.

Diode Arrays Selection Notes

Select this component when designing circuits requiring ultra-low reverse recovery charge to minimize switching losses and electromagnetic interference. It is suitable for applications demanding high efficiency and fast switching speeds without the need for external snubber circuits. Consider the thermal resistance and power dissipation limits relative to the expected case temperature and ambient conditions.

Diode Arrays Part Context

This device belongs to the Qspeed™ family from Power Integrations, designed to offer the lowest QRR among 200 V silicon diodes. The family utilizes Schottky technologies to achieve superior dynamic performance compared to traditional silicon rectifiers. This specific model provides a common-cathode configuration ideal for synchronous rectification or bridge applications.

Diode Arrays Replacement Considerations

The LQA10N200C serves as a functional equivalent within the same series but utilizes a TO-252 DPAK surface-mount package instead of the TO-220AB through-hole format. Verify pinout compatibility and thermal management requirements when substituting between these package types.

Diode Arrays FAQ

What is the softness factor (tb/ta) of the LQA10T200C?

The typical softness factor (tb/ta) is 0.39 at a junction temperature of 125 °C.

Does the LQA10T200C require snubber circuits?

No, its recovery characteristics are designed to eliminate the need for snubber circuits while reducing EMI.

What is the maximum non-repetitive peak surge current?

The maximum non-repetitive peak surge current is 60 A for a 60 Hz, half-cycle pulse.

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