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LQA20N150C is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Power Integrations. Its product description is DIODE ARRAY GP 150V 10A TO252. Review the specifications below when checking this part for your BOM.
The LQA20N150C is a Qspeed™ family, 150 V, 20 A common-cathode diode in a TO-252 DPAK package. It features an average forward current of 10 A per diode and a peak repetitive reverse voltage of 150 V. The device exhibits ultra-low reverse recovery charge (QRR) of 27.8 nC at 125 °C and low reverse recovery current (IRRM) of 1.66 A at 125 °C. Operating junction temperature ranges from -55 °C to +150 °C with a power dissipation of 41.7 W at 25 °C case temperature.
Verify the specific ordering suffix 'N' corresponds to the TO-252 DPAK surface-mount package configuration. Confirm RoHS compliance and halogen-free status per IEC 61249-2-21 standards during procurement. Ensure thermal management aligns with the specified junction-to-case thermal resistance values for optimal performance.
Select this component for applications requiring extremely fast switching and high efficiency. Its ultra-low QRR reduces EMI filter component size and count while eliminating the need for snubber circuits. Suitable for designs prioritizing high dI/dt capabilities and soft recovery behavior in compact surface-mount layouts.
Part of the Power Integrations Qspeed™ family of silicon diodes. Designed to offer the lowest QRR among 150 V silicon diodes. Utilizes Schottky technologies in its design and construction, requiring test setups similar to traditional Schottky configurations as noted in application note AN-300.
LQA20T150C shares identical electrical specifications but utilizes a TO-220AB through-hole package instead of the TO-252 DPAK form factor.
The typical reverse recovery charge (QRR) at 125 °C is 27.8 nC.
No, the device's recovery characteristics are designed to eliminate the need for snubber circuits.
The maximum operating junction temperature is +150 °C.
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