LXP1002-23-0/TR

RF Diode Overview

The LXP1002-23-0/TR is a silicon PIN diode manufactured by Microchip Technology, designed for surface-mount applications. It utilizes a non-hermetic EPSM package and operates within a temperature range of -55°C to +125°C. The device features a peak reverse voltage of 50V and a maximum forward current of 100 mA. Key electrical characteristics include a capacitance of 0.32 pF at 50V and 1 MHz, and a resistance of 4 ohms at 100 mA and 100 MHz. The component has a maximum power dissipation of 250 mW and is supplied in a SOT-23-3 (TO-236-3) package.

RF Diode Feature Summary

• Utilizes silicon technology for RF switching applications
• Non-hermetic construction suitable for standard SMT processes
• Low capacitance design optimized for high-frequency signal integrity

RF Diode Applications

• RF signal switching circuits
• Attenuator networks
• Phase shifters

RF Diode Procurement Notes

Verify the specific ordering suffix against official Microchip documentation to confirm tape-and-reel packaging specifications. Ensure that the requested quantity aligns with the manufacturer's minimum order multiples. Cross-reference the full part number with the latest datasheet revision to validate active status and compliance requirements before finalizing procurement orders.

RF Diode Selection Notes

Select this component when a low-capacitance PIN diode is required for RF paths operating up to 100 MHz. Verify that the 50V reverse voltage rating exceeds the circuit's peak inverse voltage. Confirm that the SOT-23-3 footprint matches the PCB layout constraints and that the thermal dissipation capabilities are sufficient for the intended power levels.

RF Diode Part Context

This part belongs to the LXP1000 series of silicon PIN diodes from Microchip Technology. The series offers various configurations for RF applications, including single and dual diode options. The LXP1002 variant specifically provides a single diode configuration in a compact surface-mount package, balancing performance with space efficiency for modern electronic designs.

RF Diode Replacement Considerations

Consult the official LXP1000-LXP1011 datasheet for direct cross-reference information. Verify pinout compatibility and electrical parameters such as capacitance and resistance against potential substitute components to ensure circuit functionality remains unchanged.