M29W640FB70ZA6E

Memory IC Overview

The M29W640FB70ZA6E is a 64-Mbit Parallel NOR Flash memory component manufactured by Micron Technology Inc. It operates with a supply voltage range of 2.7 V to 3.6 V and features an asynchronous interface with access times of 70 ns. The device supports x8 and x16 data bus widths and utilizes a 48-ball TFBGA package. Designed for industrial applications, it functions within a temperature range of -40°C to +85°C.

Memory IC Feature Summary

• Supports parallel NOR flash architecture with asynchronous random and page read modes
• Includes hardware block protection via dedicated pins for write protection and fast programming
• Features embedded program/erase controllers supporting byte, word, and buffer programming algorithms

Memory IC Applications

• Industrial IoT systems requiring reliable code storage
• Aerospace and defense electronic equipment
• Embedded control systems in automotive environments

Memory IC Procurement Notes

Verify the specific manufacturer source, as this part number may be associated with legacy Micron or acquired entities like Alliance Memory. Confirm the exact package variant and boot block configuration against current datasheets before procurement. Ensure compliance with RoHS and REACH regulations relevant to the production batch.

Memory IC Selection Notes

Select this component when a 64-Mbit density with 70 ns access speed is required for industrial-grade applications. The TFBGA-48 package suits space-constrained designs. Verify compatibility with existing system voltage levels (2.7V–3.6V) and interface requirements for parallel NOR flash integration.

Memory IC Part Context

This part belongs to the M29W640 family of 64-Mbit NOR flash memories. It shares architectural similarities with other variants in the series, differing primarily in package type, speed grade, and boot block configuration. The 'F' suffix typically denotes a specific package or pinout variation within the broader product line.