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M30L45C-E3/4W is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOTT 45V 15A TO2203. Review the specifications below when checking this part for your BOM.
The M30L45C-E3/4W is a dual common cathode Schottky rectifier manufactured by Vishay General Semiconductor - Diodes Division. It features a TO-220AB package with an average forward current of 30 A (15 A per diode) and a maximum repetitive peak reverse voltage of 45 V. The device exhibits a low forward voltage drop, reaching 0.46 V at 15 A and 125 °C. It supports a peak forward surge current of 280 A and operates within a junction temperature range of -65 to +150 °C.
Verify the specific ordering suffix against official documentation to confirm compliance requirements. The base part number indicates the core electrical specifications, while suffixes define packaging and material categorization details. Ensure the selected variant matches the required delivery mode and quantity constraints for your manufacturing process.
Select this component for designs requiring high-frequency operation and low conduction losses. The TO-220AB package facilitates effective thermal management through direct mounting. Evaluate the thermal resistance characteristics to ensure the junction temperature remains within the specified operating range during continuous load cycles.
This component belongs to the Vishay Schottky rectifier family, utilizing Trench SK technology to minimize forward voltage drop. The E3 suffix denotes consumer grade materials compliant with JESD 201 class 1A whisker testing standards. The product is designed for general-purpose rectification tasks where efficiency and reliability are critical.
Vishay does not list direct substitutes in the provided datasheet. Verify pinout compatibility and thermal performance when considering alternative manufacturers' parts.
The typical junction capacitance is 750 pF, measured at 4.0 V and 1 MHz.
Yes, the non-repetitive avalanche energy is rated at 20 mJ per diode at 25 °C with an IAS of 2 A.
The maximum solder bath temperature is 275 °C for a duration of 10 seconds, per JESD 22-B106.
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