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MA3J745E0L is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Panasonic Electronic Components. Its product description is DIODE ARR SCHOTT 30V 30MA SMINI3. Review the specifications below when checking this part for your BOM.
The Panasonic MA3J745E0L is a silicon epitaxial planar Schottky barrier diode designed for switching applications. It features an EIAJ SC-79 SMini3-F1 package with three terminals, where pin 2 is not connected. The device supports a maximum reverse voltage of 30 V and a forward current of 30 mA. Key electrical characteristics include a low forward voltage of 1.0 V at 30 mA, a reverse recovery time of 1.0 ns, and a terminal capacitance of 1.5 pF at 1 MHz. It operates within a junction temperature range up to 125 °C.
Verify the specific ordering suffix against official documentation to confirm packaging details and compliance status. Confirm availability directly with authorized distributors or the manufacturer, as standard stock levels may vary. Ensure that the component meets the required RoHS Directive standards for your specific application region before finalizing procurement.
Select this component for designs requiring fast switching speeds and low forward voltage drops in small surface-mount packages. Consider the 30 mA current limit and 30 V reverse voltage rating when defining circuit parameters. Evaluate thermal management requirements based on the specified junction temperature limits during operation.
This part belongs to the MA3J745 series of Schottky barrier diodes manufactured by Panasonic Electronic Components. It serves as a successor or equivalent to the conventional MA745 designation. The device utilizes a compact SMini3-F1 package to facilitate space-constrained printed circuit board layouts while maintaining robust switching characteristics.
The datasheet identifies the MA745 as the conventional part number equivalent. Verify pinout compatibility and electrical specifications when substituting with other SC-79 packaged Schottky diodes from different manufacturers.
The reverse recovery time is 1.0 ns under conditions of IF = IR = 10 mA.
No, terminal 2 is designated as N.C. (Not Connected) in the internal connection diagram.
The detection efficiency is 65% when measured with a peak input voltage of 3 V at a frequency of 30 MHz.
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