MA4E2501L-1290

RF Diode Overview

The MA4E2501L-1290 is a SURMOUNT™ low barrier silicon Schottky diode fabricated using the Heterolithic Microwave Integrated Circuit (HMIC) process. It features an extremely small 0201 footprint with dimensions of 0.60 mm by 0.30 mm and a thickness ranging from 0.102 mm to 0.203 mm. Electrical specifications at +25°C include a total capacitance of 0.10 pF typical, dynamic resistance of 10 Ω typical, forward voltage of 0.30 V typical, and reverse breakdown voltage of 3 V minimum. Absolute maximum ratings specify a forward current of 20 mA, reverse voltage of 5 V, RF CW incident power of 20 dBm, and dissipated power of 50 mW.

RF Diode Feature Summary

• Extremely low parasitic capacitance and inductance suitable for microwave circuits through Ku band frequencies.
• Rugged HMIC construction utilizing silicon pedestals embedded in glass dielectric for excellent loss and power dissipation characteristics.
• Surface mountable design requiring no wire bonds, featuring multi-layer metalization with platinum diffusion barrier and polyimide scratch protection.

RF Diode Applications

• Mixers
• Sub-harmonic mixers
• Detectors
• Limiters

RF Diode Procurement Notes

Verify component authenticity by cross-referencing the manufacturer's datasheet revision number and part marking against official MACOM Technology Solutions documentation. Ensure handling procedures strictly follow electrostatic discharge control guidelines for HBM Class 0 devices during installation. Confirm that soldering processes utilize acceptable alloys such as 80Au/20Sn or Sn63/Pb37 on hard substrates while avoiding electrically conductive silver epoxy.

RF Diode Selection Notes

Select this component for lower power microwave applications operating through Ku band frequencies where minimal parasitic effects are critical. The device requires surface mount die attach technology compatible with vacuum tips and hot gas bonders. Evaluate thermal management requirements against the 50 mW dissipated power limit and ensure operating temperatures remain within the -40°C to +150°C range for reliable performance.

RF Diode Part Context

This device belongs to the SURMOUNT™ Low Barrier Silicon Schottky Diode series manufactured by MACOM Technology Solutions. It utilizes the patented HMIC process to combine the small parasitics of beam lead devices with the mechanical robustness of chip-mounted components. The series is designed for high-frequency applications requiring superior mechanical performance and reliability compared to conventional beam lead Schottky diodes.

RF Diode Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult MACOM Technology Solutions directly for alternative components meeting similar electrical and physical specifications.