MADP-011034-10720T

RF Diode Overview

The MADP-011034-10720T is a surface mount PIN diode manufactured using HIPAX technology in a non-magnetic Metal Electrode Leadless Faced (MELF) package. It features a hermetically sealed, low-inductance ceramic construction with full-face bonded glass passivated CERMA chips to minimize electrical and thermal resistance. The device operates within a temperature range of -65°C to +150°C and supports continuous wave power dissipation up to 6.0 W. Key electrical specifications include a reverse voltage rating of 150 V, forward voltage ranging from 0.8 V to 1.3 V depending on current, and a typical capacitance of 1.5 pF at 1 MHz.

RF Diode Feature Summary

• Non-magnetic package design suitable for MRI applications
• Hermetically sealed rectangular MELF ceramic construction
• Low inductance structure without ribbons or wires
• RoHS compliant with tin-plated solderable surfaces

RF Diode Applications

• Circuit protection in MRI systems
• Tuning of RF coil designs in MRI applications
• Protection against long RF pulses and transient voltage spikes

RF Diode Procurement Notes

Verify the specific datasheet revision and status before procurement, as the documentation indicates preliminary development stages where volume production commitment is not guaranteed. Confirm that engineering samples or test data availability aligns with project requirements. Ensure ordering quantities match the specified tape and reel packaging constraints provided by the manufacturer.

RF Diode Selection Notes

Select this component when non-magnetic properties are critical for MRI environments. Evaluate the 150 V reverse voltage and 6.0 W power dissipation limits against circuit demands. Consider the 1.5 pF typical capacitance and 500 ns transition time for high-frequency switching performance. Verify compatibility with standard reflow and vapor phase soldering processes during assembly planning.

RF Diode Part Context

This part belongs to M/A-COM Technology Solutions' HIPAX series of PIN diodes. It utilizes advanced semiconductor manufacturing techniques to achieve low parasitic inductance and high reliability. The non-magnetic variant specifically addresses interference issues found in magnetic resonance imaging equipment, distinguishing it from standard magnetic MELF packages.

RF Diode Replacement Considerations

The MA4P504-1072T is a magnetic alternative; verify magnetic sensitivity requirements before substitution. The MA4P7461F-1072T and MA4P1250-1072T are also listed as non-magnetic options in comparative data sheets.