MADS-001317-1500AP

$4.92

Description：RF DIODE SCHOTTKY 7V
Series：-

SKU:37041c7663cd Category: RF Diodes Brand: MACOM Technology Solutions

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Product introduction

MADS-001317-1500AP is listed in the RF Diode range at ChipApex. The manufacturer field lists MACOM Technology Solutions. Its product description is RF DIODE SCHOTTKY 7V. Review the specifications below when checking this part for your BOM.

RF Diode specifications for MADS-001317-1500AP

Description：RF DIODE SCHOTTKY 7V
Series：-
Mfr：MACOM Technology Solutions
Package：Tape & Reel (TR),Cut Tape (CT)
Diode Type：Schottky
Voltage - Peak Reverse (Max)：7V
Current - Max：-
Capacitance @ Vr, F：0.02pF @ 0V, 1MHz
Resistance @ If, F：-
Power Dissipation (Max)：-
Operating Temperature：-65°C ~ 125°C
Package / Case：2-SMD, No Lead
Supplier Device Package：-
Grade：-
Qualification：-

RF Diode datasheet and documents for MADS-001317-1500AP

MADS-001317-1500AP

RF Diode Overview

The MADS-001317-1500AP is a gallium arsenide flip chip Schottky barrier diode designed for high-frequency applications. It features a total capacitance of 0.045 pF and a dynamic resistance of 4 Ohms at typical operating points. The device supports an incident LO power of +20 dBm and operates within a temperature range of -65°C to +125°C. Packaged in a 3000-piece reel, it utilizes silicon nitride passivation and polyimide scratch protection.

RF Diode Feature Summary

Flip chip configuration suitable for automated pick-and-place insertion
High cutoff frequency enabling usage past 80 GHz
Silicon nitride passivation with polyimide scratch protection layer

RF Diode Applications

Single and double balanced mixers in PCN transceivers and radios
Police radar detectors
Automotive radar detectors

RF Diode Procurement Notes

Verify the specific ordering suffix AP against official documentation to confirm the 3000-piece reel packaging format. Ensure handling procedures account for ESD sensitivity and static precautions during assembly. Confirm substrate compatibility for solder or conductive epoxy mounting methods prior to integration.

RF Diode Selection Notes

Select this component for millimeter-wave mixer designs requiring low parasitic capacitance and series resistance. Evaluate thermal management capabilities within the specified -65°C to +125°C operating range. Consider the flip chip form factor for compact circuit board layouts and automated manufacturing processes.

RF Diode Part Context

This part belongs to MACOM's line of GaAs flip chip Schottky diodes. It is fabricated using OMCVD epitaxial material to ensure high device uniformity and extremely low parasitics. The design focuses on maintaining performance consistency across high-frequency operations.