Diode Arrays MB20H100CTHM3/I product image

MB20H100CTHM3/I

$0.89
  • Description:DIODE ARR SCHOT 100V 10A TO263AB
  • Series:-

SKU:047dbc527566 Category: Brand:

  
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MB20H100CTHM3/I is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOT 100V 10A TO263AB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MB20H100CTHM3/I

  • Description:DIODE ARR SCHOT 100V 10A TO263AB
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tape & Reel (TR)
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):100 V
  • Current - Average Rectified (Io) (per Diode):10A
  • Voltage - Forward (Vf) (Max) @ If:770 mV @ 10 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:4.5 µA @ 100 V
  • Operating Temperature - Junction:-65°C ~ 175°C
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package:TO-263AB (D2PAK)
  • Grade:Automotive
  • Qualification:AEC-Q101

Diode Arrays datasheet and documents for MB20H100CTHM3/I

MB20H100CTHM3/I

Diode Arrays Overview

The Vishay MB20H100CTHM3/I is a dual common cathode high voltage Schottky rectifier utilizing High Barrier Technology for improved high-temperature performance. It operates with a maximum repetitive peak reverse voltage of 100 V and provides a total maximum average forward rectified current of 20 A (10 A per diode). The device features a low forward voltage drop, reaching 0.64 V at 20 A and 125 °C, alongside a low leakage current of 4.5 μA at 25 °C. It supports a peak forward surge current of 250 A and functions within an operating junction temperature range of -65 °C to +175 °C.

Diode Arrays Feature Summary

  • High Barrier Technology designed for enhanced high-temperature operation
  • Guardring structure implemented for overvoltage protection
  • Low forward voltage drop contributing to reduced power loss and high efficiency
  • Qualified to AEC-Q101 automotive standards

Diode Arrays Applications

  • High frequency rectifiers in switching mode power supplies
  • Freewheeling diodes in DC/DC converters
  • Polarity protection circuits

Diode Arrays Procurement Notes

Verify the specific suffix HM3/I against official documentation to confirm RoHS compliance, halogen-free status, and AEC-Q101 qualification. Ensure the D2PAK (TO-263AB) package matches the required thermal resistance and mounting torque specifications for the target application environment.

Diode Arrays Selection Notes

Select this component when a dual common cathode configuration is required for space-constrained designs. The D2PAK package offers lower thermal resistance compared to through-hole alternatives. Verify that the 100 V rating aligns with the circuit's peak reverse voltage requirements and that the 20 A total current capacity meets the load demands.

Diode Arrays Part Context

This part belongs to the MB20HxxCT series from Vishay General Semiconductor. It shares the same electrical characteristics as the MF20H100CT but utilizes a surface mount D2PAK (TO-263AB) package instead of the ITO-220AB through-hole case. Both variants are available in the same datasheet under Document Number 87736.

Diode Arrays Replacement Considerations

MB20H100CTHE3/I

Diode Arrays FAQ

What is the typical thermal resistance per diode for the D2PAK package?

The typical thermal resistance per diode (RθJC) for the MB20H100CT in the D2PAK package is 2.0 °C/W.

Does the component meet automotive reliability standards?

Yes, the MB20H100CTHM3/I variant is qualified to AEC-Q101 standards.

What is the maximum non-repetitive peak forward surge current?

The device can withstand a peak forward surge current of 250 A for an 8.3 ms single half sine-wave superimposed on rated load.

MB20H100CTHM3/IMB20H100CTHM3/I
$0.89
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