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MB20H100CTHM3/I is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOT 100V 10A TO263AB. Review the specifications below when checking this part for your BOM.
The Vishay MB20H100CTHM3/I is a dual common cathode high voltage Schottky rectifier utilizing High Barrier Technology for improved high-temperature performance. It operates with a maximum repetitive peak reverse voltage of 100 V and provides a total maximum average forward rectified current of 20 A (10 A per diode). The device features a low forward voltage drop, reaching 0.64 V at 20 A and 125 °C, alongside a low leakage current of 4.5 μA at 25 °C. It supports a peak forward surge current of 250 A and functions within an operating junction temperature range of -65 °C to +175 °C.
Verify the specific suffix HM3/I against official documentation to confirm RoHS compliance, halogen-free status, and AEC-Q101 qualification. Ensure the D2PAK (TO-263AB) package matches the required thermal resistance and mounting torque specifications for the target application environment.
Select this component when a dual common cathode configuration is required for space-constrained designs. The D2PAK package offers lower thermal resistance compared to through-hole alternatives. Verify that the 100 V rating aligns with the circuit's peak reverse voltage requirements and that the 20 A total current capacity meets the load demands.
This part belongs to the MB20HxxCT series from Vishay General Semiconductor. It shares the same electrical characteristics as the MF20H100CT but utilizes a surface mount D2PAK (TO-263AB) package instead of the ITO-220AB through-hole case. Both variants are available in the same datasheet under Document Number 87736.
MB20H100CTHE3/I
The typical thermal resistance per diode (RθJC) for the MB20H100CT in the D2PAK package is 2.0 °C/W.
Yes, the MB20H100CTHM3/I variant is qualified to AEC-Q101 standards.
The device can withstand a peak forward surge current of 250 A for an 8.3 ms single half sine-wave superimposed on rated load.
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