MBR10200CT

Diode Arrays Overview

The MBR10200CT is a high-temperature Schottky barrier rectifier diode manufactured by Diotec Semiconductor. It features a dual anode common cathode configuration with a total average forward current rating of 10 A, divided into two legs of 5 A each. The device supports a repetitive peak reverse voltage of 200 V and operates within a junction temperature range of -50°C to +175°C. Forward voltage characteristics are specified at less than 0.84 V at 5 A and less than 0.90 V at 10 A, both measured at 25°C. Peak forward surge current ratings are 80 A at 50 Hz and 90 A at 60 Hz per diode.

Diode Arrays Feature Summary

• High-temperature operation capability up to a junction temperature of +175°C
• Dual anode common cathode configuration for efficient power management
• Low forward voltage drop to minimize power loss and enhance efficiency
• Robust surge current handling with specific ratings for 50 Hz and 60 Hz half-sine waves

Diode Arrays Applications

• Standard commercial and industrial grade power supply circuits
• High-efficiency DC-DC converter designs
• Free-wheeling rectification in switching power applications

Diode Arrays Procurement Notes

Verify the specific package type and pinout configuration against your PCB footprint requirements before ordering. Confirm that the thermal resistance parameters align with your heat dissipation strategy, as performance depends on case temperature measurements. Ensure compliance with RoHS directives if required for your manufacturing process. Check for any recent product change notifications regarding material or packaging updates.

Diode Arrays Selection Notes

Select this component when a dual common cathode arrangement is necessary within a single package to save board space. The wide operating temperature range makes it suitable for environments where standard silicon rectifiers might fail. Consider the thermal resistance from junction to case when designing heatsinking solutions, as the device relies on case temperature for current derating calculations.

Diode Arrays Part Context

This component belongs to the family of high-voltage Schottky barrier rectifiers designed for general-purpose power conversion. It utilizes silicon technology to provide fast switching speeds and low reverse recovery charge compared to standard PN junction diodes. The dual configuration allows for use in full-wave rectification topologies without requiring discrete diode pairing.

Diode Arrays Replacement Considerations

Cross-reference with other manufacturers' 200V 5A per leg dual Schottky rectifiers in equivalent packages. Verify that replacement parts meet the same junction temperature limits and forward voltage specifications to ensure circuit compatibility.