Diode Arrays MBR120150CT product image

MBR120150CT

$46.21
  • Description:DIODE MOD SCHOTT 150V 60A 2TOWER
  • Series:-

SKU:55f8a48628c8 Category: Brand:

  
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MBR120150CT is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 150V 60A 2TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR120150CT

  • Description:DIODE MOD SCHOTT 150V 60A 2TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):150 V
  • Current - Average Rectified (Io) (per Diode):60A
  • Voltage - Forward (Vf) (Max) @ If:880 mV @ 60 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:1 mA @ 150 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Twin Tower
  • Supplier Device Package:Twin Tower
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBR120150CT

MBR120150CT

Diode Arrays Overview

The GeneSiC Semiconductor MBR120150CT is a silicon power Schottky diode module featuring a Twin Tower package. It provides an average forward current of 120 A per package and supports repetitive peak reverse voltages ranging from 150 V to 200 V. The device operates within a junction temperature range of -55 °C to +150 °C. Key electrical characteristics include a maximum forward voltage of 0.88 V at Tj = 25 °C and a thermal resistance (junction-case) of 0.80 °C/W per leg. The module exhibits high surge capability with a peak forward surge current of 800 A.

Diode Arrays Feature Summary

  • High surge current capability for robust operation under transient conditions
  • Twin Tower package design for efficient mounting and thermal management
  • Low forward voltage drop to minimize conduction losses
  • Not sensitive to electrostatic discharge

Diode Arrays Applications

  • DC-DC converters
  • Free-wheeling rectification in motor drives
  • Power supply output rectification

Diode Arrays Procurement Notes

Verify the specific voltage rating suffix, as the datasheet indicates types available from 150 V to 200 V VRRM. Confirm terminal configuration details, noting that devices with the 'R' suffix have reversed leads. Ensure the selected variant matches the required DC blocking voltage and thermal requirements for the target application environment.

Diode Arrays Selection Notes

Select this module for applications requiring high current density and low forward voltage loss. The Twin Tower package facilitates screw mounting on heatsinks. Consider the thermal resistance of 0.80 °C/W when designing the cooling system. Verify that the operating junction temperature remains within the specified -55 °C to +150 °C range during all operational phases.

Diode Arrays Part Context

This component belongs to the MBR120 series of silicon power Schottky diodes manufactured by GeneSiC Semiconductor. The series includes variants with different voltage ratings up to 200 V. These modules are designed for high-efficiency power conversion applications where low forward voltage and high reliability are critical performance factors.

Diode Arrays Replacement Considerations

Compatible substitutes within the same series include MBR120200CT and MBR120200CTR, which share identical current ratings and package dimensions but offer higher voltage capabilities.

MBR120150CTMBR120150CT
$46.21
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