Diode Arrays MBR12020CT product image

MBR12020CT

$48.80
  • Description:DIODE MOD SCHOTT 20V 120A 2TOWER
  • Series:-

SKU:718db3aa831b Category: Brand:

  
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MBR12020CT is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 20V 120A 2TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR12020CT

  • Description:DIODE MOD SCHOTT 20V 120A 2TOWER
  • Series:-
  • Mfr:GeneSiC Semiconductor
  • Package:Bulk
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):20 V
  • Current - Average Rectified (Io) (per Diode):120A (DC)
  • Voltage - Forward (Vf) (Max) @ If:650 mV @ 120 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:3 mA @ 20 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Twin Tower
  • Supplier Device Package:Twin Tower
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBR12020CT

MBR12020CT

Diode Arrays Overview

The GeneSiC MBR12020CT is a silicon power Schottky diode module featuring a twin tower package with an average forward current rating of 120 A per package. It offers a repetitive peak reverse voltage (VRRM) of 20 V and a maximum forward voltage of 0.70 V at Tj = 100 °C. The device supports a peak forward surge current of 800 A for an 8.3 ms half-sine pulse. Thermal resistance from junction to case is 0.80 °C/W per leg. Operating and storage temperatures range from -55 °C to +150 °C.

Diode Arrays Feature Summary

  • High surge capability designed for robust transient handling
  • Twin tower package configuration providing electrical isolation
  • Not ESD sensitive for simplified handling

Diode Arrays Applications

  • Power conversion systems
  • Freewheeling rectification in DC-DC converters
  • High-efficiency power supply designs

Diode Arrays Procurement Notes

Verify the specific suffix designation, as devices marked with 'R' feature reversed leads compared to standard configurations. Confirm that the procurement matches the required voltage rating of 20 V and the twin tower package style. Ensure thermal management solutions align with the specified junction-to-case thermal resistance values for reliable operation within the stated temperature limits.

Diode Arrays Selection Notes

Select this component when a 120 A continuous current rating and 20 V blocking voltage are required in a thermally efficient twin tower package. Consider the 0.80 °C/W thermal resistance for heatsink calculations. Evaluate the 800 A surge capability against potential circuit inrush currents. Verify lead orientation requirements if ordering variants with reversed pinouts.

Diode Arrays Part Context

This part belongs to the MBR120 series of silicon power Schottky diodes manufactured by GeneSiC Semiconductor. The series includes various voltage ratings ranging from 20 V to 40 V, all sharing the same 120 A current rating and twin tower package form factor. These modules are designed for high-performance applications requiring low forward voltage drop and high reliability.

Diode Arrays Replacement Considerations

Compatible substitutes include other parts within the MBR120 series such as the MBR12030CT or MBR12040CT, provided the higher voltage ratings do not conflict with system design constraints. Verify package dimensions and terminal configurations match before substitution.

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