MBR12035 CTR

$51.03

Description：DIODE MOD SCHOTT 35V 120A 2TOWER
Series：-

SKU:c01b89f81bd0 Category: Diode Arrays Brand: GeneSiC Semiconductor

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Product introduction

MBR12035 CTR is listed in the Diode Arrays range at ChipApex. The manufacturer field lists GeneSiC Semiconductor. Its product description is DIODE MOD SCHOTT 35V 120A 2TOWER. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR12035 CTR

Description：DIODE MOD SCHOTT 35V 120A 2TOWER
Series：-
Mfr：GeneSiC Semiconductor
Package：Bulk
Diode Configuration：1 Pair Common Anode
Technology：Schottky
Voltage - DC Reverse (Vr) (Max)：35 V
Current - Average Rectified (Io) (per Diode)：120A (DC)
Voltage - Forward (Vf) (Max) @ If：650 mV @ 120 A
Speed：Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：3 mA @ 20 V
Operating Temperature - Junction：-55°C ~ 150°C
Mounting Type：Chassis Mount
Package / Case：Twin Tower
Supplier Device Package：Twin Tower
Grade：-
Qualification：-

Diode Arrays datasheet and documents for MBR12035 CTR

MBR12035 CTR

Diode Arrays Overview

The GeneSiC MBR12035CTR is a silicon power Schottky rectifier module featuring a Twin Tower package. It provides a repetitive peak reverse voltage of 35 V and an average forward current rating of 120 A per package. The device exhibits a maximum forward voltage of 0.70 V at 60 A and a thermal resistance of 0.80 °C/W per leg. Operating temperatures range from -55 °C to +150 °C, with a peak forward surge current capability of 800 A.

Diode Arrays Feature Summary

High surge current capability for robust transient handling
Electrically isolated base plate within the Twin Tower package
Not sensitive to electrostatic discharge

Diode Arrays Applications

Power conversion systems
DC-DC converters
Freewheeling applications in high-frequency circuits

Diode Arrays Procurement Notes

Verify the specific part number suffix against official datasheets to confirm terminal configuration. The 'CTR' designation indicates reversed leads compared to standard variants. Confirm RoHS compliance status and ensure the sourcing channel provides valid manufacturer documentation before procurement.

Diode Arrays Selection Notes

Select this component when a 35 V blocking voltage and 120 A continuous current are required in a screw-mountable module. The low forward voltage drop supports efficiency optimization. Ensure the application environment remains within the specified -55 °C to +150 °C junction temperature limits.

Diode Arrays Part Context

This module belongs to the MBR120 series of silicon power Schottky diodes manufactured by GeneSiC Semiconductor. The series includes variants ranging from 20 V to 40 V reverse voltage ratings, all sharing the same 120 A current capacity and Twin Tower mechanical footprint.

Diode Arrays Replacement Considerations

Compatible substitutes include other MBR120 series modules such as MBR12030CT or MBR12040CT, provided the voltage ratings align with circuit requirements and lead configurations match the board layout.